High voltage NPN transistor Slkor 2SC2712-Y offering stable gain and low noise figure for electronic circuits

Name: High voltage NPN transistor Slkor 2SC2712-Y offering stable gain and low noise figure for electronic circuits
Brand: Hefei Purple Horn E-Commerce Co., Ltd.
SKU: 2SC2712-Y
Availability: InStock

Key Attributes

Model Number: 2SC2712-Y

Product Custom Attributes

Emitter-Base Voltage(Vebo):

Current - Collector Cutoff:

100nA

DC Current Gain:

120@2mA,6V

Transition Frequency(fT):

80MHz

Number:

1 NPN

Type:

NPN

Vce Saturation(VCE(sat)):

250mV@100mA,10mA

Pd - Power Dissipation:

150mW

Current - Collector(Ic):

150mA

Collector - Emitter Voltage VCEO:

50V

Operating Temperature:

Mfr. Part #:

2SC2712-Y

Package:

SOT-23

Product Description

Product Overview

The 2SC2712 is a NPN transistor designed for high voltage and high current applications. It offers excellent hFE linearity and high DC current gain, making it suitable for various electronic circuits. Key features include a low noise figure, contributing to improved signal integrity in sensitive applications. This transistor is available in different hFE classifications, allowing for precise selection based on gain requirements.

Product Attributes

Brand: SLKORMICRO
Type: NPN Transistors
Package: SOT-23

Technical Specifications

Absolute Maximum Ratings

Parameter	Symbol	Ta = 25	Unit
Collector-base voltage	VCBO	60	V
Collector-emitter voltage	VCEO	50	V
Emitter-base voltage	VEBO	5	V
Collector current	IC	150	mA
Base current	IB	30	mA
Collector power dissipation	Pc	150	mW
Junction temperature	Tj	150
Storage temperature range	Tstg	-55 to +125

Electrical Characteristics

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Collector-base breakdown voltage	VCBO	Ic= 100 A IE= 0			60	V
Collector-emitter breakdown voltage	VCEO	Ic= 1 mA IB= 0			50	V
Emitter-base breakdown voltage	VEBO	IE= 100A IC= 0			5	V
Collector-base cut-off current	ICBO	VCB= 60 V , IE= 0			100	nA
Emitter cut-off current	IEBO	VEB= 5V , IC=0			100	nA
Collector-emitter saturation voltage	VCE(sat)	IC=100 mA, IB=10mA		0.25		V
Base-emitter saturation voltage	VBE(sat)	IC=100 mA, IB=10mA		1.2		V
DC current gain	hFE	VCE=6V, IC= 2mA	70		700
			70	140
			120	240
			200	400
		350	700
Noise figure	NF	VCE = 6 V, IC = 0.1 mA , f = 1KHz,RG=10K		1	10	dB
Collector output capacitance	Cob	VCB= 10V, IE= 0,f=1MHz		2	3.5	pF
Transition frequency	fT	VCE= 10V, IC=1mA		80		MHz

hFE Classification

Type	Range	Marking
2SC2712-O	70-140	LO
2SC2712-Y	120-240	LY
2SC2712-G	200-400	LG
2SC2712-L	350-700	LL

Dimensions (SOT-23)

Symbol	Unit	A	A1	bp	c	D	E	e	e1	HE	Lp	Q	v	w
mm	0.9	0.1	0.48	0.15	0.38	1.4	1.9	2.1	0.55	0.95	0.45	0.15	0.2	0.1
	1.1	0.15				1.2	2.5		0.45

2203071730_Slkor-2SC2712-Y_C2980858.pdf

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