Power Switching N Channel MOSFET Siliup SP30N16TC 30V with 5.6A Continuous Drain Current and Low RDSon
Key Attributes
Model Number:
SP30N16TC
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5.6A
RDS(on):
16mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
53pF
Number:
1 N-channel
Output Capacitance(Coss):
60pF
Input Capacitance(Ciss):
420pF
Pd - Power Dissipation:
1.8W
Gate Charge(Qg):
9nC@4.5V
Mfr. Part #:
SP30N16TC
Package:
SOT-223
Product Description
Product Overview
The SP30N16TC is a 30V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high power and current handling, this surface-mount device is suitable for applications such as battery switches and DC/DC converters. It offers a typical RDS(on) of 16m at 10V and 24m at 4.5V, with a continuous drain current of 5.6A.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Type: N-Channel MOSFET
- Package Type: SOT-223
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | V(BR)DSS | 30 | V | |||
| RDS(on) | RDS(on) | @10V | 16 | m | ||
| RDS(on) | RDS(on) | @4.5V | 24 | m | ||
| ID | ID | 5.6 | A | |||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDSS | 30 | V | |||
| Gate-Source Voltage | VGSS | -20 | 20 | V | ||
| Continuous Drain Current | ID | 5.6 | A | |||
| Pulse Drain Current | IDM | 22.4 | A | |||
| Power Dissipation | PD | 1.8 | W | |||
| Thermal Resistance Junction-to-Ambient | RJA | 69 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250A | 30 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=24V , VGS=0V | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=250A | 1.0 | 1.5 | 2.2 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V, ID =3.2A | - | 16 | 28 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =4.5V, ID =2.8A | - | 24 | 42 | m |
| Input Capacitance | Ciss | VDS=15V , VGS=0V , f=1MHz | - | 420 | - | pF |
| Output Capacitance | Coss | - | 60 | - | ||
| Reverse Transfer Capacitance | Crss | - | 53 | - | ||
| Total Gate Charge | Qg | VDS=15V , VGS=4.5V , ID=3A | - | 9 | - | nC |
| Gate-Source Charge | Qgs | - | 1.9 | - | ||
| Gate-Drain Charge | Qgd | - | 2.1 | - | ||
| Turn-On Delay Time | td(on) | VDD=15V VGS=10V , RG=3.3 , ID=4A | - | 5 | - | nS |
| Turn-On Rise Time | tr | - | 11 | - | ||
| Turn-Off Delay Time | td(off) | - | 14 | - | ||
| Turn-Off Fall Time | tf | - | 2.1 | - | ||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Package Information (SOT-223) | ||||||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | Min | Max | Min | Max |
| A | 1.520 | 1.800 | 0.060 | 0.071 | ||
| A1 | 0.000 | 0.100 | 0.000 | 0.004 | ||
| A2 | 1.500 | 1.700 | 0.059 | 0.067 | ||
| b | 0.660 | 0.820 | 0.026 | 0.032 | ||
| c | 0.250 | 0.350 | 0.010 | 0.014 | ||
| D | 6.200 | 6.400 | 0.244 | 0.252 | ||
| D1 | 2.900 | 3.100 | 0.114 | 0.122 | ||
| E | 3.300 | 3.700 | 0.130 | 0.146 | ||
| E1 | 6.830 | 7.070 | 0.269 | 0.278 | ||
| e | 2.300(BSC) | 0.091(BSC) | ||||
| e1 | 4.500 | 4.700 | 0.177 | 0.185 | ||
| L | 0.900 | 1.150 | 0.035 | 0.045 | ||
| 0 | 10 | 0 | 10 | |||
2508131042_Siliup-SP30N16TC_C41354914.pdf
Related Products
High Reliability Surface Mounted Rectifier ZHIDE SS510A Molded Plastic Epoxy UL 94V 0 Flame Retardant
Product OverviewThe SS52A-SS520A series are surface-mounted Schottky barrier rectifiers designed for high-reliability applications. They offer low reverse leakage, high forward surge capability, and are guaranteed for high-temperature soldering. These rectifiers are compliant with RoHS standards, ...
NPN General Purpose Amplifier YANGJIE MMBT2222AT SOT523 Package RoHS Compliant Electronic Component
Product OverviewThe MMBT2222AT is an NPN General Purpose Amplifier in a SOT-523 surface mount package, ideally suited for automatic insertion. It offers a moisture sensitivity level of 1 and meets UL-94 V-0 flammability rating, being halogen-free. This component is designed for general-purpose ...
Switching amplifier NPN transistor YONGYUTAI 2N3904 epitaxial planar type with 100 milliamps collector current rating
Product OverviewNPN silicon epitaxial planar transistor designed for switching and amplifier applications. It is recommended as a complementary type to the PNP transistor 2N3906. This transistor is also available in the SOT-23 case under the type designation MMBT3904.Product AttributesBrand: Not ...
power switching device XCH XCH6003 trenched N channel MOSFET with low gate charge and fast switching
Product OverviewThe XCH6003 is a high cell density trenched N-channel MOSFET designed for efficient power switching applications. It offers excellent RDS(ON) and efficiency, making it suitable for most low-power switching and load switch applications. This device features super low gate charge and ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
