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quality General Purpose NPN Transistor Slkor 2SC2714-Y with Collector Current 20mA and SOT23 Package Design factory
quality General Purpose NPN Transistor Slkor 2SC2714-Y with Collector Current 20mA and SOT23 Package Design factory

General Purpose NPN Transistor Slkor 2SC2714-Y with Collector Current 20mA and SOT23 Package Design

Key Attributes
Model Number: 2SC2714-Y
Product Custom Attributes
Emitter-Base Voltage(Vebo):
4V
Current - Collector Cutoff:
500nA
DC Current Gain:
200@1mA,6V
Transition Frequency(fT):
550MHz
Number:
1 NPN
Type:
NPN
Vce Saturation(VCE(sat)):
400mV@100mA,10mA
Pd - Power Dissipation:
100mW
Current - Collector(Ic):
20mA
Collector - Emitter Voltage VCEO:
30V
Mfr. Part #:
2SC2714-Y
Package:
SOT-23
Product Description

Product Overview

The 2SC2714 is an NPN transistor designed for general-purpose applications. It offers a collector current capability of 20mA and a collector-emitter voltage of 30V. This transistor is available in the SOT-23 package, making it suitable for compact electronic designs. Key electrical characteristics include a DC current gain (hFE) ranging from 40 to 200, a collector-emitter saturation voltage (VCE(sat)) of up to 0.4V, and a transition frequency (fT) of 550 MHz. The device is classified into different hFE ranges (R, O, Y) for specific gain requirements.

Product Attributes

  • Brand: slkormicro
  • Model Series: 2SC2714
  • Transistor Type: NPN
  • Package Type: SOT-23
  • Classification: hFE ranges (R, O, Y)

Technical Specifications

Parameter Symbol Test Conditions Rating Unit
Features
Collector Current Capability IC 20 mA
Collector Emitter Voltage VCEO 30 V
Absolute Maximum Ratings (Ta = 25)
Collector - Base Voltage VCBO 40 V
Collector - Emitter Voltage VCEO 30 V
Emitter - Base Voltage VEBO 4 V
Collector Current - Continuous IC 20 mA
Collector Power Dissipation PC 100 mW
Thermal Resistance Junction to Ambient RJA 1000 /W
Junction Temperature TJ 125
Storage Temperature Range Tstg -55 to 125
Electrical Characteristics (Ta = 25)
Collector-base breakdown voltage VCBO Ic= 100 A, IE= 0 40 V
Collector-emitter breakdown voltage VCEO Ic= 1 mA, IB= 0 30 V
Emitter-base breakdown voltage VEBO IE= 100A, IC= 0 4 V
Collector-base cut-off current ICBO VCB= 18 V, IE= 0 0.5 A
Emitter cut-off current IEBO VEB= 4V, IC=0 0.5 A
Collector-emitter saturation voltage VCE(sat) IC=100 mA, IB=10mA 0.4 V
Base-emitter saturation voltage VBE(sat) IC=100 mA, IB=10mA 1.2 V
DC current gain hFE VCE= 6V, IC= 1mA 40 - 200
Noise Figure NF VCE= 6V, IE= -1mA, f=100MHz 2.5 - 5 dB
Reverse Transfer capacitance Cre VCB= 6V, IE= 0, f=1MHz 0.7 pF
Transition frequency fT VCE= 6V, IC= 1mA 550 MHz
Classification of hfe
Type Range Marking
2SC2714-R 40-80 QR
2SC2714-O 70-140 QO
2SC2714-Y 100-200 QY
Dimensions (SOT-23) (mm)
A 1.1 max.
A1 0.1
bp 0.48
c 0.38
D 3.0
E 2.8
e 1.9
e1 1.4
HE 2.5
Lp 0.95
Q 0.55
w 0.45
v 0.15

2407261007_Slkor-2SC2714-Y_C33962558.pdf

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