SP010N03AGHTD 100V N Channel Power MOSFET Featuring Split Gate Trench Technology and Fast Switching

Key Attributes
Model Number: SP010N03AGHTD
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
180A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.8mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
35pF
Number:
1 N-channel
Output Capacitance(Coss):
1.067nF
Input Capacitance(Ciss):
7.162nF
Pd - Power Dissipation:
280W
Gate Charge(Qg):
105nC@10V
Mfr. Part #:
SP010N03AGHTD
Package:
TO-263
Product Description

Product Overview

The SP010N03AGHTD is a 100V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. Engineered with advanced split gate trench technology, it offers fast switching speeds, low gate charge, and low Rdson. This device is ideal for power switching applications, DC-DC converters, and power management systems. It is 100% tested for single pulse avalanche energy, ensuring reliability in demanding applications.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Code: SP010N03AGHTD
  • Device Type: N-Channel Power MOSFET
  • Package: TO-263
  • Technology: Advanced Split Gate Trench Technology

Technical Specifications

Parameter Symbol Test Condition Min Typ Max Units
Product Summary
Drain-Source Voltage V(BR)DSS 100 V
Drain-Source ON Resistance RDS(on)TYP @10V 2.8 m
Continuous Drain Current ID 180 A
Absolute Maximum Ratings
Drain-Source Voltage VDS (Ta=25, unless otherwise noted) 100 V
Gate-Source Voltage VGS (Ta=25, unless otherwise noted) 20 V
Continuous Drain Current ID (Tc=25) 180 A
Continuous Drain Current ID (Tc=100) 120 A
Pulsed Drain Current IDM 720 A
Single Pulse Avalanche Energy EAS 1332 mJ
Power Dissipation PD (Tc=25) 210 W
Thermal Resistance Junction-to-Case RJC 0.60 /W
Storage Temperature Range TSTG -55 150
Operating Junction Temperature Range TJ -55 150
Electrical Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=250uA 100 - - V
Drain Cut-Off Current IDSS VDS=80V , VGS=0V , TJ=25 - - 1 A
Gate Leakage Current IGSS VGS=20V , VDS=0V - - 0.1 A
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 2.0 3.0 4.0 V
Drain-Source ON Resistance RDS(ON) VGS = 10V, ID = 30A - 2.8 3.5 m
Dynamic Characteristics
Input Capacitance Ciss VDS=50V , VGS=0V , f=1MHz - 7162 - pF
Output Capacitance Coss - 1067 - pF
Reverse Transfer Capacitance Crss - 35 - pF
Total Gate Charge Qg VDS=50V , VGS=10V , ID=125A - 105 - nC
Gate-Source Charge Qgs - 47 - nC
Gate-Drain Charge Qgd - 23 - nC
Switching Characteristics
Turn-On Delay Time td(on) VDD=50V, VGS=10V , RG=6, ID=125A - 26 - nS
Rise Time tr - 75 - nS
Turn-Off Delay Time td(off) - 87 - nS
Fall Time tf - 30 - nS
Source-Drain Diode Characteristics
Source-Drain Diode Forward Voltage VSD IS = 1A, VGS = 0V - - 1.2 V
Maximum Body-Diode Continuous Current IS - - 180 A
Reverse Recovery Time Trr IS=20A, di/dt=100A/us, TJ=25 - 75 - nS
Reverse Recovery Charge Qrr - 210 - nC
TO-263 Package Information
Symbol Dimensions In Millimeters Dimensions In Inches
Min. Max. Min. Max.
A 4.470 4.670 0.176 0.184
A1 0.000 0.150 0.000 0.006
B 1.120 1.420 0.044 0.056
b 0.710 0.910 0.028 0.036
b1 1.170 1.370 0.046 0.054
c 0.310 0.530 0.012 0.021
c1 1.170 1.370 0.046 0.054
D 10.010 10.310 0.394 0.406
E 8.500 8.900 0.335 0.350
e 2.540 TYP. 0.100 TYP.
e1 4.980 5.180 0.196 0.204
L 14.940 15.500 0.588 0.610
L1 4.950 5.450 0.195 0.215
L2 2.340 2.740 0.092 0.108
L3 1.300 1.700 0.051 0.067
0 8 0 8
V 5.600 REF. 0.220 REF.

2504101957_Siliup-SP010N03AGHTD_C22385365.pdf

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