SP010N03AGHTD 100V N Channel Power MOSFET Featuring Split Gate Trench Technology and Fast Switching
Product Overview
The SP010N03AGHTD is a 100V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. Engineered with advanced split gate trench technology, it offers fast switching speeds, low gate charge, and low Rdson. This device is ideal for power switching applications, DC-DC converters, and power management systems. It is 100% tested for single pulse avalanche energy, ensuring reliability in demanding applications.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP010N03AGHTD
- Device Type: N-Channel Power MOSFET
- Package: TO-263
- Technology: Advanced Split Gate Trench Technology
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Units |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 100 | V | |||
| Drain-Source ON Resistance | RDS(on)TYP | @10V | 2.8 | m | ||
| Continuous Drain Current | ID | 180 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25, unless otherwise noted) | 100 | V | ||
| Gate-Source Voltage | VGS | (Ta=25, unless otherwise noted) | 20 | V | ||
| Continuous Drain Current | ID | (Tc=25) | 180 | A | ||
| Continuous Drain Current | ID | (Tc=100) | 120 | A | ||
| Pulsed Drain Current | IDM | 720 | A | |||
| Single Pulse Avalanche Energy | EAS | 1332 | mJ | |||
| Power Dissipation | PD | (Tc=25) | 210 | W | ||
| Thermal Resistance Junction-to-Case | RJC | 0.60 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 100 | - | - | V |
| Drain Cut-Off Current | IDSS | VDS=80V , VGS=0V , TJ=25 | - | - | 1 | A |
| Gate Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 0.1 | A |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 2.0 | 3.0 | 4.0 | V |
| Drain-Source ON Resistance | RDS(ON) | VGS = 10V, ID = 30A | - | 2.8 | 3.5 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=50V , VGS=0V , f=1MHz | - | 7162 | - | pF |
| Output Capacitance | Coss | - | 1067 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 35 | - | pF | |
| Total Gate Charge | Qg | VDS=50V , VGS=10V , ID=125A | - | 105 | - | nC |
| Gate-Source Charge | Qgs | - | 47 | - | nC | |
| Gate-Drain Charge | Qgd | - | 23 | - | nC | |
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=50V, VGS=10V , RG=6, ID=125A | - | 26 | - | nS |
| Rise Time | tr | - | 75 | - | nS | |
| Turn-Off Delay Time | td(off) | - | 87 | - | nS | |
| Fall Time | tf | - | 30 | - | nS | |
| Source-Drain Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | IS = 1A, VGS = 0V | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 180 | A | |
| Reverse Recovery Time | Trr | IS=20A, di/dt=100A/us, TJ=25 | - | 75 | - | nS |
| Reverse Recovery Charge | Qrr | - | 210 | - | nC | |
| TO-263 Package Information | ||||
|---|---|---|---|---|
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
| Min. | Max. | Min. | Max. | |
| A | 4.470 | 4.670 | 0.176 | 0.184 |
| A1 | 0.000 | 0.150 | 0.000 | 0.006 |
| B | 1.120 | 1.420 | 0.044 | 0.056 |
| b | 0.710 | 0.910 | 0.028 | 0.036 |
| b1 | 1.170 | 1.370 | 0.046 | 0.054 |
| c | 0.310 | 0.530 | 0.012 | 0.021 |
| c1 | 1.170 | 1.370 | 0.046 | 0.054 |
| D | 10.010 | 10.310 | 0.394 | 0.406 |
| E | 8.500 | 8.900 | 0.335 | 0.350 |
| e | 2.540 TYP. | 0.100 TYP. | ||
| e1 | 4.980 | 5.180 | 0.196 | 0.204 |
| L | 14.940 | 15.500 | 0.588 | 0.610 |
| L1 | 4.950 | 5.450 | 0.195 | 0.215 |
| L2 | 2.340 | 2.740 | 0.092 | 0.108 |
| L3 | 1.300 | 1.700 | 0.051 | 0.067 |
| 0 | 8 | 0 | 8 | |
| V | 5.600 REF. | 0.220 REF. | ||
2504101957_Siliup-SP010N03AGHTD_C22385365.pdf
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