Compact Slkor 2N7002KDW N Channel MOSFET featuring low RDS ON and high saturation current capability
Key Attributes
Model Number:
2N7002KDW
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
340mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
5.3Ω@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@1mA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
10pF
Number:
2 N-Channel
Input Capacitance(Ciss):
40pF
Pd - Power Dissipation:
150mW
Gate Charge(Qg):
30nC
Mfr. Part #:
2N7002KDW
Package:
SOT-363-6
Product Description
Product Overview
The 2N7002KDW is an N-Channel MOSFET featuring a high-density cell design for low RDS(ON). This voltage-controlled small signal switch offers high saturation current capability and ESD protection, making it suitable for various applications. Its epoxy meets UL 94 V-0 flammability rating.
Product Attributes
- Brand: SLKORMicro (implied by website)
- Model: 2N7002KDW
- Certifications: UL 94 V-0 flammability rating
Technical Specifications
| Symbol | Parameter | Conditions | Min | Typ | Max | Units |
| VDS | Drain-source Voltage | 60 | V | |||
| VGS | Gate-source Voltage | ±20 | V | |||
| ID | Drain Current | 340 | mA | |||
| Pd | Total Power Dissipation | 150 | mW | |||
| TJ | Junction Temperature | 150 | ℃ | |||
| TSTG | Storage Temperature | -55 | 150 | ℃ | ||
| RθJA | Thermal Resistance from Junction to Ambient | 820 | ℃/W | |||
| V(BR)Dss | Drain-source Breakdown Voltage | VGS =0V,ID = 250 uA | 60 | V | ||
| VGS(th) | Gate-Threshold Voltage (note 1) | VDS=VGS, ID=1mA | 1.0 | 2.5 | V | |
| IGSS | Gate-body Leakage | VDS=0V, VGS =±20V | ±10 | uA | ||
| IdSS | Zero Gate Voltage Drain Current | VDS=48V, VGS=0V | 1 | uA | ||
| Rds(on) | Drain-source On-resistance (note 1) | VGS=4.5V, ID=200mA | 5.3 | Ω | ||
| VGS=10V, ID=500mA | 5.0 | Ω | ||||
| Vsd | Diode Forward Voltage (note 1) | VGS=0V, IS= 300mA | 1.5 | V | ||
| Qr | Recovered charge | VGS=0V, IS= 300mA VR=25V,dls/dt=-100A/µS | 30 | nC | ||
| Ciss | Input Capacitance | VDS=10V VGS=0V F=1MHz | 40 | pF | ||
| Coss | Output Capacitance | 30 | pF | |||
| Crss | Reverse Transfer Capacitance | 10 | pF | |||
| Td(on) | Turn on delay time | VDD=50V,VGS=10V,RL=250Ω RGS=50Ω ,RGEN=50Ω | 10 | ns | ||
| Td(off) | Turn off delay time | 15 | ns | |||
| trr | Reverse recovery time | VGS=0V, IS=300mA,VR=25V Dls/dt=-100A/µs | 30 | ns | ||
| BVGSO | Gate-Source Breakdown Voltage | IGS=±1mA(Open Drain) | ±21.5 | ±30 | V |
Note: 1. Pulse Test : Pulse width ≤300µS, duty cycle ≤2%.
2206231830_Slkor-2N7002KDW_C3041292.pdf
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