Siliup SP40N25TQ N Channel Planar MOSFET Suitable for Synchronous Rectification and Power Switching
Key Attributes
Model Number:
SP40N25TQ
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
250V
Current - Continuous Drain(Id):
40A
Operating Temperature -:
-55℃~+150℃
RDS(on):
80mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
25pF
Number:
-
Output Capacitance(Coss):
403pF
Pd - Power Dissipation:
190W
Input Capacitance(Ciss):
2.58nF
Gate Charge(Qg):
45nC@10V
Mfr. Part #:
SP40N25TQ
Package:
TO-220-3L-C
Product Description
Product Overview
The SP40N25TQ is a 250V N-Channel Planar MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high-frequency switching and synchronous rectification, this MOSFET features fast switching speeds, low gate charge, and low Rdson. It is 100% tested for single pulse avalanche energy and is ideal for DC-DC converter applications. The device comes in a TO-220-3L package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP40N25TQ
- Technology: N-Channel Planar MOSFET
- Package: TO-220-3L (1:G 2:D 3:S)
- Marking: 40N25 (Device Code)
- Website: www.siliup.com
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 250 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=200V , VGS=0V , TJ=25 | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 2 | 3 | 4 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V , ID=20A | - | 80 | 100 | m |
| Input Capacitance | Ciss | VDS=25V , VGS=0V , f=1MHz | - | 2580 | - | pF |
| Output Capacitance | Coss | - | 403 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 25 | - | pF | |
| Total Gate Charge | Qg | VDS=200V , VGS=10V , ID=45A | - | 45 | - | nC |
| Gate-Source Charge | Qgs | - | 17 | - | nC | |
| Gate-Drain Charge | Qgd | - | 16 | - | nC | |
| Turn-On Delay Time | Td(on) | VDD=125V VGS=10V , RG=10, ID=45A | - | 33 | - | nS |
| Rise Time | Tr | - | 151 | - | nS | |
| Turn-Off Delay Time | Td(off) | - | 61 | - | nS | |
| Fall Time | Tf | - | 89 | - | nS | |
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 40 | A | |
| Reverse Recovery Time | Trr | IS=40A, di/dt=100A/us, TJ=25 | - | 210 | - | nS |
| Reverse Recovery Charge | Qrr | - | 1650 | - | nC | |
| Continuous Drain Current | ID | (TC=25) | - | - | 40 | A |
| Continuous Drain Current | ID | (TC=100) | - | - | 26 | A |
| Pulsed Drain Current | IDM | - | - | 160 | A | |
| Single Pulse Avalanche Energy | EAS | - | 756 | - | mJ | |
| Power Dissipation | PD | (TC=25) | - | - | 190 | W |
| Thermal Resistance Junction-to-Case | RJC | - | 0.66 | - | /W | |
| Storage Temperature Range | TSTG | -55 | - | 150 | ||
| Operating Junction Temperature Range | TJ | -55 | - | 150 | ||
| Drain-Source Voltage | VDS | - | - | 250 | V | |
| Gate-Source Voltage | VGS | - | - | 20 | V |
TO-220-3L Package Dimensions (Millimeters/Inches)
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
|---|---|---|---|---|
| Min. | Max. | Min. | Max. | |
| A | 4.400 | 4.600 | 0.173 | 0.181 |
| A1 | 2.250 | 2.550 | 0.089 | 0.100 |
| b | 0.710 | 0.910 | 0.028 | 0.036 |
| b1 | 1.170 | 1.370 | 0.046 | 0.054 |
| c | 0.330 | 0.650 | 0.013 | 0.026 |
| c1 | 1.200 | 1.400 | 0.047 | 0.055 |
| D | 9.910 | 10.250 | 0.390 | 0.404 |
| E | 8.950 | 9.750 | 0.352 | 0.384 |
| E1 | 12.650 | 13.050 | 0.498 | 0.514 |
| e | 2.540 TYP. | 0.100 TYP. | ||
| e1 | 4.980 | 5.180 | 0.196 | 0.204 |
| F | 2.650 | 2.950 | 0.104 | 0.116 |
| H | 7.900 | 8.100 | 0.311 | 0.319 |
| h | 0.000 | 0.300 | 0.000 | 0.012 |
| L | 12.900 | 13.400 | 0.508 | 0.528 |
| L1 | 2.850 | 3.250 | 0.112 | 0.128 |
| V | 6.900 REF. | 0.276 REF. | ||
| 3.400 | 3.800 | 0.134 | 0.150 |
2504101957_Siliup-SP40N25TQ_C42372376.pdf
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