Low RDS ON Trench Power LV MOSFET Slkor SL4459A for Power Management and Load Switching Applications

Key Attributes
Model Number: SL4459A
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
6.5A
RDS(on):
72mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
65pF
Number:
1 P-Channel
Input Capacitance(Ciss):
520pF
Output Capacitance(Coss):
100pF
Pd - Power Dissipation:
3.1W
Gate Charge(Qg):
9.2nC@10V
Mfr. Part #:
SL4459A
Package:
SOP-8
Product Description

Product Overview

The SL4459A is a P-Channel MOSFET featuring Trench Power LV MOSFET technology and a high-density cell design for low RDS(ON). It offers high-speed switching capabilities, making it suitable for applications such as battery protection, power management, and load switching. The device boasts a -30V drain-source breakdown voltage and a continuous drain current of -6.5A.

Product Attributes

  • Brand: SLKORMicro
  • Model: SL4459A
  • Technology: Trench Power LV MOSFET

Technical Specifications

ParameterConditionMinTypMaxUnit
Drain-Source On-State Resistance (RDS(on))VGS=-10V, ID=-6.5A--3346m
VGS=-4.5V, ID=-5A--5072m
Drain-Source Breakdown Voltage (BV(BR)DSS)VGS=0V, ID=-250A-30----V
Zero Gate Voltage Drain Current (IDSS)VDS=-30V, VGS=0V-----1A
Gate-Body Leakage Current (IGSS)VGS=20V, VDS=0V----100nA
Gate Threshold Voltage (VGS(th))VDS=VGS, ID=-250A-1-1.8-3V
Tj=25, Is=-6.5A---0.8-1.2V
Input Capacitance (CISS)VDS=-15V, VGS=0V, f=1MHz--520--pF
Output Capacitance (COSS)VDS=-15V, VGS=0V, f=1MHz--100--pF
Reverse Transfer Capacitance (CRSS)VDS=-15V, VGS=0V, f=1MHz--65--pF
Total Gate Charge (Qg)VDD=-15V, ID=-6.5A, VGS=-10V, RG=3--9.2--nC
Gate Source Charge (Qgs)VDD=-15V, ID=-6.5A, VGS=-10V, RG=3--1.6--nC
Gate Drain Charge (Qgd)VDD=-15V, ID=-6.5A, VGS=-10V, RG=3--2.2--nC
Turn-on Delay Time (td(on))VDD=-15V, ID=-6.5A, VGS=-10V, RG=3--7.5--nS
Turn-on Rise Time (tr)VDD=-15V, ID=-6.5A, VGS=-10V, RG=3--5.5--nS
Turn-Off Delay Time (td(off))VDD=-15V, ID=-6.5A, VGS=-10V, RG=3--19--nS
Turn-Off Fall Time (tf)VDD=-15V, ID=-6.5A, VGS=-10V, RG=3--7--nS
Forward on voltage (VSD)Tj=25, Is=-6.5A---0.8-1.2V
Maximum Power Dissipation (PD)Tc=25C--3.1--W
Thermal Resistance Junction-Ambient (RJA)----40--C/W
Continuous Drain Current (ID)Tc=25C---6.5--A
Pulse Drain Current (IDM)Tc=25C---30--A
Diode Continuous Forward Current (IS)Tc=25C---6.5--A
Gate-Source Voltage (VGS)------20V
Maximum Junction Temperature (TJ)------150C
Storage Temperature Range (TSTG)---50--155C

2504211840_Slkor-SL4459A_C48392755.pdf

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