Low RDS ON Trench Power LV MOSFET Slkor SL4459A for Power Management and Load Switching Applications
Product Overview
The SL4459A is a P-Channel MOSFET featuring Trench Power LV MOSFET technology and a high-density cell design for low RDS(ON). It offers high-speed switching capabilities, making it suitable for applications such as battery protection, power management, and load switching. The device boasts a -30V drain-source breakdown voltage and a continuous drain current of -6.5A.
Product Attributes
- Brand: SLKORMicro
- Model: SL4459A
- Technology: Trench Power LV MOSFET
Technical Specifications
| Parameter | Condition | Min | Typ | Max | Unit |
| Drain-Source On-State Resistance (RDS(on)) | VGS=-10V, ID=-6.5A | -- | 33 | 46 | m |
| VGS=-4.5V, ID=-5A | -- | 50 | 72 | m | |
| Drain-Source Breakdown Voltage (BV(BR)DSS) | VGS=0V, ID=-250A | -30 | -- | -- | V |
| Zero Gate Voltage Drain Current (IDSS) | VDS=-30V, VGS=0V | -- | -- | -1 | A |
| Gate-Body Leakage Current (IGSS) | VGS=20V, VDS=0V | -- | -- | 100 | nA |
| Gate Threshold Voltage (VGS(th)) | VDS=VGS, ID=-250A | -1 | -1.8 | -3 | V |
| Tj=25, Is=-6.5A | -- | -0.8 | -1.2 | V | |
| Input Capacitance (CISS) | VDS=-15V, VGS=0V, f=1MHz | -- | 520 | -- | pF |
| Output Capacitance (COSS) | VDS=-15V, VGS=0V, f=1MHz | -- | 100 | -- | pF |
| Reverse Transfer Capacitance (CRSS) | VDS=-15V, VGS=0V, f=1MHz | -- | 65 | -- | pF |
| Total Gate Charge (Qg) | VDD=-15V, ID=-6.5A, VGS=-10V, RG=3 | -- | 9.2 | -- | nC |
| Gate Source Charge (Qgs) | VDD=-15V, ID=-6.5A, VGS=-10V, RG=3 | -- | 1.6 | -- | nC |
| Gate Drain Charge (Qgd) | VDD=-15V, ID=-6.5A, VGS=-10V, RG=3 | -- | 2.2 | -- | nC |
| Turn-on Delay Time (td(on)) | VDD=-15V, ID=-6.5A, VGS=-10V, RG=3 | -- | 7.5 | -- | nS |
| Turn-on Rise Time (tr) | VDD=-15V, ID=-6.5A, VGS=-10V, RG=3 | -- | 5.5 | -- | nS |
| Turn-Off Delay Time (td(off)) | VDD=-15V, ID=-6.5A, VGS=-10V, RG=3 | -- | 19 | -- | nS |
| Turn-Off Fall Time (tf) | VDD=-15V, ID=-6.5A, VGS=-10V, RG=3 | -- | 7 | -- | nS |
| Forward on voltage (VSD) | Tj=25, Is=-6.5A | -- | -0.8 | -1.2 | V |
| Maximum Power Dissipation (PD) | Tc=25C | -- | 3.1 | -- | W |
| Thermal Resistance Junction-Ambient (RJA) | -- | -- | 40 | -- | C/W |
| Continuous Drain Current (ID) | Tc=25C | -- | -6.5 | -- | A |
| Pulse Drain Current (IDM) | Tc=25C | -- | -30 | -- | A |
| Diode Continuous Forward Current (IS) | Tc=25C | -- | -6.5 | -- | A |
| Gate-Source Voltage (VGS) | -- | -- | -- | 20 | V |
| Maximum Junction Temperature (TJ) | -- | -- | -- | 150 | C |
| Storage Temperature Range (TSTG) | -- | -50 | -- | 155 | C |
2504211840_Slkor-SL4459A_C48392755.pdf
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