Durable 20V 50A N Channel MOSFET SLkor SL50N02D with low Rds on and high avalanche energy capability
Key Attributes
Model Number:
SL50N02D
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
50A
Operating Temperature -:
-50℃~+150℃
RDS(on):
13mΩ@2.5V,18A
Gate Threshold Voltage (Vgs(th)):
1.2V
Reverse Transfer Capacitance (Crss@Vds):
215pF
Number:
1 N-channel
Input Capacitance(Ciss):
1.46nF
Pd - Power Dissipation:
31W
Gate Charge(Qg):
20nC@10V
Mfr. Part #:
SL50N02D
Package:
TO-252
Product Description
Product Overview
The SL50N02D is a 20V/50A N-Channel MOSFET featuring a high-density cell design for ultra-low Rds(on). It offers fully characterized avalanche voltage and current, good stability and uniformity with high EAS, and an excellent package for good heat dissipation. This MOSFET is suitable for load switching, hard switched and high frequency circuits, and uninterruptible power supply applications.
Product Attributes
- Brand: SLKormicro
- Device Code: 50N02
- Package: TO-252
Technical Specifications
| Symbol | Parameter | Condition | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Breakdown Voltage | VGS=0VID=250A | -- | -- | 20 | V |
| VGS | Gate-Source Voltage | 12 | V | |||
| TJ | Maximum Junction Temperature | 150 | C | |||
| TSTG | Storage Temperature Range | -50 | to | 155 | C | |
| ID | Tested Continuous Drain Current@GS=10V | Tc=25C | -- | 50 | -- | A |
| IDM | Pulse Drain Current | Tc=25C | -- | 200 | -- | A |
| IS | Diode Continuous Forward Current | Mounted on Large Heat Sink, Tc=25C | -- | 31 | -- | A |
| PD | Maximum Power Dissipation | (TA=25unless otherwise noted) | -- | -- | -- | W |
| EAS | Single pulse avalanche energy | -- | 11.25 | -- | mJ | |
| Static Electrical Characteristics @ TJ = 25C (unless otherwise stated) | ||||||
| BV(BR)DSS | Drain-Source Breakdown Voltage | VGS=0VID=250A | 20 | -- | -- | V |
| IDSS | Zero Gate Voltage Drain Current | VDS=20VVGS=0V | -- | -- | 1 | uA |
| IGSS | Gate-Body Leakage Current | VGS=12VVDS=0V | -- | -- | 100 | nA |
| VGS(th) | Gate Threshold Voltage | VDS=VGSID=250A | 0.4 | 0.75 | 1.2 | V |
| RDS(on) | Drain-Source On-State Resistance | VGS=4.5V ID=20A | -- | 6.8 | 10 | m |
| RDS(on) | Drain-Source On-State Resistance | VGS=2.5VID=18A | -- | 8 | 13 | m |
| VSD | Forward on voltage | Tj=25Is=20A | -- | -- | 1.2 | V |
| Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise stated) | ||||||
| CISS | Input Capacitance | VDS=10VVGS=0V f=1MHz | -- | 1460 | -- | pF |
| COSS | Output Capacitance | -- | 240 | -- | pF | |
| CRSS | Reverse Transfer Capacitance | -- | 215 | -- | pF | |
| Qg | Total Gate Charge | VDD=10VID=10A VGS=4.5VRG=3 | -- | 20 | -- | nC |
| Qgs | Gate Source Charge | -- | 3 | -- | nC | |
| Qgd | Gate Drain Charge | -- | 6.5 | -- | nC | |
| td(on) | Turn-on Delay Time | -- | 10 | -- | nS | |
| tr | Turn-on Rise Time | -- | 20 | -- | nS | |
| td(off) | Turn-Off Delay Time | -- | 40 | -- | nS | |
| tf | Turn-Off Fall Time | -- | 20 | -- | nS | |
2409302231_Slkor-SL50N02D_C5155471.pdf
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