Power Switching MOSFET Siliup SP010N07GHTH 100V N Channel with Low RDSon and Split Gate Trench Technology
Key Attributes
Model Number:
SP010N07GHTH
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
80A
RDS(on):
6.9mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
7pF
Number:
1 N-channel
Output Capacitance(Coss):
330pF
Input Capacitance(Ciss):
2.335nF
Pd - Power Dissipation:
120W
Gate Charge(Qg):
35nC@10V
Mfr. Part #:
SP010N07GHTH
Package:
TO-252
Product Description
Product Overview
The SP010N07GHTH is a 100V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for power switching applications, battery management, and uninterruptible power supplies.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP010N07GHTH
- Technology: Advanced Split Gate Trench Technology
- Channel Type: N-Channel
- Package: TO-252
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | - | - | - | 100 | V |
| Gate-Source Voltage | VGS | - | - | - | 20 | V |
| Continuous Drain Current (Tc=25) | ID | - | - | - | 80 | A |
| Continuous Drain Current (Tc=100) | ID | - | - | - | 55 | A |
| Pulsed Drain Current | IDM | - | - | - | 320 | A |
| Single Pulse Avalanche Energy | EAS | VDD=50V, VGS=10V, L=0.5mH, RG=25 | - | 289 | - | mJ |
| Power Dissipation (Tc=25) | PD | - | - | - | 120 | W |
| Thermal Resistance Junction-to-Case | RJC | - | - | 1.04 | - | /W |
| Storage Temperature Range | TSTG | - | -55 | - | 150 | |
| Operating Junction Temperature Range | TJ | - | -55 | - | 150 | |
| Drain-Source Breakdown Voltage | BVDSS | ID = 250A, VGS = 0V | 100 | - | - | V |
| Drain Cut-Off Current | IDSS | VDS = 80V, VGS = 0V | - | - | 1 | uA |
| Gate Leakage Current | IGSS | VGS = 20V, VDS = 0V | - | - | 0.1 | nA |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 2 | 3 | 4 | V |
| Drain-Source ON Resistance | RDS(ON) | VGS = 10V, ID = 30A | - | 6.9 | 8.7 | m |
| Input Capacitance | Ciss | VDS =50V, VGS = 0V, f = 1.0MHz | - | 2335 | - | pF |
| Output Capacitance | Coss | - | - | 330 | - | pF |
| Reverse Transfer Capacitance | Crss | - | - | 7 | - | pF |
| Total Gate Charge | Qg | VDS=50V , VGS=10V , ID=50A | - | 35 | - | nC |
| Gate-Source Charge | Qgs | - | - | 5.5 | - | - |
| Gate-Drain Charge | Qgd | - | - | 6 | - | - |
| Turn-On Delay Time | td(on) | VGS = 50V, VDS =50V, ID=50A RG = 4.7 | - | 8 | - | nS |
| Rise Time | tr | - | - | 13 | - | - |
| Turn-Off Delay Time | td(off) | - | - | 42 | - | - |
| Fall Time | tf | - | - | 19 | - | - |
| Source-Drain Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | - | 80 | A |
| Reverse Recovery Time | Trr | IS=15A, di/dt=100A/us, TJ=25 | - | 49 | - | nS |
| Reverse Recovery Charge | Qrr | - | - | 42 | - | nC |
| Package Information (TO-252) | Dimensions In Millimeters | Dimensions In Inches | ||
|---|---|---|---|---|
| Symbol | Min. | Max. | Min. | Max. |
| A | 2.200 | 2.400 | 0.087 | 0.094 |
| A1 | 0.000 | 0.127 | 0.000 | 0.005 |
| b | 0.660 | 0.860 | 0.026 | 0.034 |
| c | 0.460 | 0.580 | 0.018 | 0.023 |
| D | 6.500 | 6.700 | 0.256 | 0.264 |
| D1 | 5.100 | 5.460 | 0.201 | 0.215 |
| D2 | 4.830 REF. | 0.190 REF. | - | - |
| E | 6.000 | 6.200 | 0.236 | 0.244 |
| e | 2.186 | 2.386 | 0.086 | 0.094 |
| L | 9.800 | 10.400 | 0.386 | 0.409 |
| L1 | 2.900 REF. | 0.114 REF. | - | - |
| L2 | 1.400 | 1.700 | 0.055 | 0.067 |
| L3 | 1.600 REF. | 0.063 REF. | - | - |
| L4 | 0.600 | 1.000 | 0.024 | 0.039 |
| 1.100 | 1.300 | 0.043 | 0.051 | |
| 0 | 8 | 0 | 8 | |
| h | 0.000 | 0.300 | 0.000 | 0.012 |
| V | 5.350 REF. | 0.211 REF. | - | - |
2504101957_Siliup-SP010N07GHTH_C22466795.pdf
Related Products
power control Sensata B612F-2T-YEC module for AC DC variable voltage output applications up to 15KW
Sensata B-2T, B-2 Series Power Modules The Sensata B-2T and B-2 Series Power Modules offer versatile solutions for AC or DC variable voltage output applications, capable of handling up to 15KW. These modules feature eight circuit options and are UL Recognized (E72445), providing reliable performance ...
Digital transistor YANGJIE DTC124EUA featuring built in resistors and UL 94 V 0 rating for electronic
Product OverviewThe DTC124EUA is a digital transistor with built-in resistors, designed for easy configuration of inverter circuits without external input resistors. It features a surface mount package ideal for automatic insertion and meets UL-94 V-0 flammability rating. This NPN transistor is ...
digital transistor YANGJIE DTA114YE featuring built in resistors designed for automatic insertion and halogen free
Digital Transistors (Built-in Resistors)The DTA114YE is a digital transistor with built-in resistors, designed for surface mount applications and ideally suited for automatic insertion. It offers moisture sensitivity level 1 and is halogen-free, making it a reliable choice for various electronic ...
General purpose NPN transistor YANGJIE BCX56 with tin plated leads and low saturation voltage
Product OverviewThe BCX56 is an NPN General Purpose Amplifier from Yangzhou Yangjie Electronic Technology Co., Ltd. It features a low collector-emitter saturation voltage and is housed in a SOT-89 package with UL-94 V-0 flammability rating. Halogen-free options are available upon request. This ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
