Siliup SP85N04AGHTO 85V N Channel MOSFET Suitable for PWM Hard Switched and High Frequency Circuits
Key Attributes
Model Number:
SP85N04AGHTO
Product Custom Attributes
Drain To Source Voltage:
85V
Current - Continuous Drain(Id):
160A
RDS(on):
3.8mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V
Reverse Transfer Capacitance (Crss@Vds):
23pF
Number:
1 N-channel
Pd - Power Dissipation:
246W
Output Capacitance(Coss):
428pF
Input Capacitance(Ciss):
3.265nF
Gate Charge(Qg):
42nC@10V
Mfr. Part #:
SP85N04AGHTO
Package:
TOLL
Product Description
Product Overview
The SP85N04AGHTO is an 85V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. This device features fast switching, low gate charge, and low RDS(on), making it suitable for PWM applications, hard-switched, and high-frequency circuits, as well as power management. It is 100% tested for single pulse avalanche energy.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP85N04AGHTO
- Package: TOLL
Technical Specifications
| Parameter | Symbol | Test Condition | Rating | Unit | ||
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 85 | V | |||
| RDS(on) (Typ) | RDS(on) | @10V | 3.8 | m | ||
| Continuous Drain Current | ID | 160 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | (Ta=25, unless otherwise noted) | 85 | V | ||
| Gate-Source Voltage | VGSS | 20 | V | |||
| Continuous Drain Current (Tc=25C) | ID | 160 | A | |||
| Continuous Drain Current (Tc=100C) | ID | 107 | A | |||
| Pulse Drain Current Tested | IDM | 640 | A | |||
| Single Pulse Avalanche Energy1 | EAS | 646 | mJ | |||
| Power Dissipation (Tc=25C) | PD | 246 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 0.51 | C/W | |||
| Maximum Junction Temperature | TJ | -55 to 150 | C | |||
| Storage Temperature Range | TSTG | -55 to 150 | C | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | ID = 250A, VGS = 0V | 85 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = 68V, VGS = 0V | - | 1 | uA | |
| Gate Leakage Current | IGSS | VGS = 20V, VDS = 0V | - | 100 | nA | |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 2.0 | 3.0 | 4.0 | V |
| Drain-Source On-state Resistance | RDS(ON) | VGS = 10V, ID = 50A | - | 3.8 | 4.6 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VGS=0V, VDS=40V, F=1MHz | - | 3265 | pF | |
| Output Capacitance | Coss | - | 428 | |||
| Reverse Transfer Capacitance | Crss | - | 23 | |||
| Total Gate Charge | Qg | VDS=40V, VGS=10V, ID=50A | - | 42 | nC | |
| Gate-Source Charge | Qgs | - | 15 | |||
| Gate-Drain Charge | Qgd | - | 20 | |||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=40V, ID=50A, VGS=10V, RG=3 | - | 17 | nS | |
| Rise Time | tr | - | 39 | |||
| Turn-Off Delay Time | td(off) | - | 64 | |||
| Fall Time | tf | - | 42 | |||
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 160 | A | |
| Reverse Recovery Time | trr | IS=50 A, di/dt=100 A/s, TJ=25 | - | 45 | nS | |
| Reverse Recovery Charge | Qrr | - | 56 | nC | ||
| Package Information (TOLL) | ||||||
| Dimension | Symbol | Min. | Nom. | Max. | Unit | |
| A | 2.20 | 2.30 | 2.40 | |||
| b | 0.65 | 0.75 | 0.85 | |||
| C | 0.508 | REF | ||||
| D | 10.25 | 10.40 | 10.55 | |||
| D1 | 2.85 | 3.00 | 3.15 | |||
| E | 9.75 | 9.90 | 10.05 | |||
| E1 | 9.65 | 9.80 | 9.95 | |||
| E2 | 8.95 | 9.10 | 9.25 | |||
| E3 | 7.25 | 7.40 | 7.55 | |||
| e | 1.20 | BSC | ||||
| F | 1.05 | 1.20 | 1.35 | |||
| H | 11.55 | 11.70 | 11.85 | |||
| H1 | 6.03 | 6.18 | 6.33 | |||
| H2 | 6.85 | 7.00 | 7.15 | |||
| H3 | 3.00 | BSC | ||||
| L | 1.55 | 1.70 | 1.85 | |||
| L1 | 0.55 | 0.7 | 0.85 | |||
| L2 | 0.45 | 0.6 | 0.75 | |||
| M | 0.08 | REF. | ||||
| 8 | 10 | 12 | ||||
| K | 4.25 | 4.40 | 4.55 | |||
Note: 1. The test condition is VDD=40V, VGS=10V, L=0.5mH, RG=25
Order Information:
| Device | Package | Unit/Tape |
|---|---|---|
| SP85N04AGHTO | TOLL | 2000 |
2506271720_Siliup-SP85N04AGHTO_C49258029.pdf
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