High Current Power MOSFET Slkor SL60N02D Offering Low On Resistance and Fast Switching Performance
Key Attributes
Model Number:
SL60N02D
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
60A
RDS(on):
9.8mΩ@2.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
269pF
Number:
1 N-channel
Pd - Power Dissipation:
40W
Output Capacitance(Coss):
280pF
Input Capacitance(Ciss):
1.625nF
Gate Charge(Qg):
43.7nC@10V
Mfr. Part #:
SL60N02D
Package:
TO-252
Product Description
Product Overview
This Power MOSFET utilizes advanced TRENCH technology to minimize conduction loss, offer superior switching performance, and provide robust protection against high energy pulses in avalanche and commutation modes. It is designed for applications requiring low on-resistance and fast switching, including PWM applications, load switching, and power management.
Product Attributes
- Brand: SLKORMicro (inferred from website URL)
- Model: SL60N02D
- Technology: Advanced TRENCH
- Certifications: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
Technical Specifications
| Parameter | Symbol | Value | Unit | Test Condition | Min. | Typ. | Max. | |
| Absolute Maximum Ratings | ||||||||
| Drain-source Voltage | VDS | 20 | V | |||||
| Gate-source Voltage | VGS | ±12 | V | |||||
| Continuous Drain Current | ID | 60 | A | TC=25°C | ||||
| Continuous Drain Current | ID | 39 | A | TC=100°C | ||||
| Pulsed Drain Current | IDM | 240 | A | TC=25°C, Tp Limited By Tjmax (note1) | ||||
| Maximum Power Dissipation | PD | 40 | W | TC=25°C | ||||
| Avalanche energy, single Pulse | EAS | 90 | mJ | L=0.5mH (note2) | ||||
| Operating Junction And Storage Temperature | Tj,Tstg | -55 To 150 | °C | |||||
| Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds | TL | 300 | °C | |||||
| Thermal Resistance | ||||||||
| Junction-to-Case | RθJC | 3.125 | °C/W | Max. | ||||
| Electrical Characteristics | ||||||||
| Off Characteristic | ||||||||
| Drain-source breakdown voltage | BVDSS | 20 | V | VGS=0V, ID=250μA | ||||
| Zero gate voltage drain current | IDSS | 1 | μA | VDS=20V, VGS=0V | Max. | |||
| Gate-source leakage current | IGSS | ±100 | nA | VGS=±12V, VDS=0V | Max. | |||
| On Characteristic | ||||||||
| Gate threshold voltage | VGS(th) | 0.4 | 1.0 | V | VDS=VGS, ID=250μA | Min. | Typ. | Max. |
| Drain-source on-state resistance | RDS(on) | 5 | 6.8 | mΩ | VGS=4.5V, ID=30A | Typ. | Max. | |
| Drain-source on-state resistance | RDS(on) | 7.1 | 9.8 | mΩ | VGS=2.5V, ID=30A | Typ. | Max. | |
| Dynamic Characteristic | ||||||||
| Input Capacitance | Ciss | 1625 | PF | VGS=0V, VDS=10V, f=1.0MHz | Typ. | |||
| Output Capacitance | Coss | 280 | PF | VGS=0V, VDS=10V, f=1.0MHz | Typ. | |||
| Reverse Transfer Capacitance | Crss | 269 | PF | VGS=0V, VDS=10V, f=1.0MHz | Typ. | |||
| Switching Characteristics | ||||||||
| Turn-on delay time | td(on) | 17 | nS | VGS=4.5V ,VDS=10V, ID=30ARG=3Ω | Typ. | |||
| Turn-on Rise time | tr | 50 | nS | VGS=4.5V ,VDS=10V, ID=30ARG=3Ω | Typ. | |||
| Turn-off delay time | td(off) | 75 | nS | VGS=4.5V ,VDS=10V, ID=30ARG=3Ω | Typ. | |||
| Turn-off Fall time | tf | 25 | nS | VGS=4.5V ,VDS=10V, ID=30ARG=3Ω | Typ. | |||
| Gate Total Charge | QG | 43.7 | nC | VGS=10V, VDS=10V, ID=60A | Typ. | |||
| Gate-Source Charge | QgS | 2.7 | nC | VGS=10V, VDS=10V, ID=60A | Typ. | |||
| Gate-Drain Charge | QgD | 10.9 | nC | VGS=10V, VDS=10V, ID=60A | Typ. | |||
| Drain-Source Diode Characteristics | ||||||||
| Body Diode Forward Voltage | VSD | 0.9 | 1.2 | V | VGS=0V, ISD=10A | Typ. | Max. | |
| Body Diode Forward Current | Is | 60 | A | |||||
2312160125_Slkor-SL60N02D_C19632490.pdf
Related Products
High Reliability Surface Mounted Rectifier ZHIDE SS510A Molded Plastic Epoxy UL 94V 0 Flame Retardant
Product OverviewThe SS52A-SS520A series are surface-mounted Schottky barrier rectifiers designed for high-reliability applications. They offer low reverse leakage, high forward surge capability, and are guaranteed for high-temperature soldering. These rectifiers are compliant with RoHS standards, ...
General purpose Zener diode XZT BZT52B30 featuring planar die construction for medium current electronic
BZT52B2V4 thru BZT52B43 ZENER DIODEThe BZT52B2V4 thru BZT52B43 series is a range of Zener diodes featuring planar die construction. These diodes are designed for general purpose, medium current applications and are ideally suited for automated assembly processes. They are available in a lead-free ...
Gallium Nitride Gan Hemts for Broadband Rf Applications Featuring Wolfspeed CGHV40050P Transistor
Product Overview The MACOM CGHV40050 is an unmatched Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) designed for general-purpose, broadband RF and microwave applications up to 4 GHz. Operating from a 50-volt rail, this device offers high efficiency, high gain, and wide bandwidth ...
RoHS Compliant NPN Amplifier YANGJIE S8050-H with Epoxy Casing and Collector Power Dissipation 300mW
Product OverviewThe S8050-L through S8050-H series are NPN general-purpose amplifiers manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. These components are designed for general amplification applications and feature an epoxy casing that meets UL-94 V-0 flammability rating. Halogen...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
