Low On Resistance 40V P Channel MOSFET Suzhou Good Ark Elec SSFN4903 for Switch Mode Power Supplies
Key Attributes
Model Number:
SSFN4903
Product Custom Attributes
Current - Continuous Drain(Id):
38A
RDS(on):
14mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
-
Reverse Transfer Capacitance (Crss@Vds):
200pF
Pd - Power Dissipation:
52W
Input Capacitance(Ciss):
4nF
Output Capacitance(Coss):
360pF
Gate Charge(Qg):
40nC@4.5V
Mfr. Part #:
SSFN4903
Product Description
Product Overview
The SSFN4903 is a 40V P-Channel MOSFET that leverages advanced MOSFET process technology to achieve high cell density and low on-resistance. This design results in a highly efficient and reliable device, ideal for high-efficiency switch mode power supplies and a wide range of other applications. Its key benefits include fast switching, reverse body recovery, low on-resistance, and low gate charge, making it particularly suitable for hand-held devices, battery protection, and load switch applications.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Main Product Characteristics | ||||||
| Drain-Source Voltage | VDS | - | - | - | -40 | V |
| Gate-Source Voltage | VGS | - | - | - | ±20 | V |
| Drain Current-Continuous (TC=25°C) | ID | - | - | - | -38 | A |
| On-Resistance | RDS(ON) | - | - | 14 | - | mΩ |
| Absolute Maximum Ratings (TC=25°C unless otherwise specified) | ||||||
| Drain-Source Voltage | VDS | - | - | - | -40 | V |
| Gate-Source Voltage | VGS | - | - | - | ±20 | V |
| Drain Current-Continuous (TC=25°C) | ID | - | - | - | -38 | A |
| Drain Current-Continuous (TC=100°C) | ID | - | - | - | -24 | A |
| Drain Current-Pulsed1 | IDM | - | - | - | -152 | A |
| Single Pulse Avalanche Energy2 | EAS | - | - | - | 130 | mJ |
| Single Pulse Avalanche Current2 | IAS | - | - | - | 51 | A |
| Power Dissipation (TC=25°C) | PD | - | - | - | 52 | W |
| Power Dissipation-Derate above 25°C | - | - | - | - | 0.42 | W/°C |
| Thermal Resistance, Junction-to-Ambient | RθJA | - | - | - | 62 | °C/W |
| Thermal Resistance, Junction-to-Case | RθJC | - | - | - | 2.4 | °C/W |
| Storage Temperature Range | TJ TSTG | - | -55 | - | +150 | °C |
| Operating Junction Temperature Range | TJ TSTG | - | -55 | - | +150 | °C |
| Electrical Characteristics (TJ=25°C unless otherwise specified) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250μA | -40 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=-40V, VGS=0V, TJ=25°C | - | - | -1 | μA |
| - | IDSS | VDS=-32V, VGS=0V, TJ=125°C | - | - | -10 | μA |
| Gate-Source Leakage Current | IGSS | VGS=±20V, VDS=0V | - | - | ±100 | nA |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-10V, ID=-15A | - | 11.3 | 14 | mΩ |
| - | RDS(ON) | VGS=-4.5V, ID=-8A | - | 15.6 | 21 | mΩ |
| Gate Threshold Voltage | VGS(th) | VGS=VDS, ID=-250μA | -1.0 | -1.6 | -2.5 | V |
| Forward Transconductance | gfs | VDS=-10V, ID=-4A | - | 11 | - | S |
| Total Gate Charge | Qg | VDS=-20V, VGS=-10V, ID=-1A | - | 22.2 | 40 | nC |
| Gate-Source Charge | Qgs | - | - | 8.2 | 16 | nC |
| Gate-Drain Charge | Qgd | - | - | 8.8 | 16 | nC |
| Turn-On Delay Time | td(on) | VDD=-20V, RG=6Ω, VGS=-10V, ID=-1A | - | 23 | 40 | nS |
| Rise Time | tr | - | - | 10 | 20 | nS |
| Turn-Off Delay Time | td(off) | - | - | 135 | 250 | nS |
| Fall Time | tf | - | - | 46 | 90 | nS |
| Input Capacitance | Clss | VDS=-25V, VGS=0V, F=1MHz | - | 2757 | 4000 | pF |
| Output Capacitance | Coss | - | - | 240 | 360 | pF |
| Reverse Transfer Capacitance | Crss | - | - | 137 | 200 | pF |
| Continuous Source Current | IS | - | - | - | -38 | A |
| Pulsed Source Current | ISM | - | - | - | -76 | A |
| Diode Forward Voltage | VSD | VGS=0V, IS=-1A, TJ=25°C | - | - | -1 | V |
| Package Outline Dimensions | ||||||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | - | - | - | - |
| MAX | MIN | MAX | MIN | - | - | |
| A | 0.900 | 0.700 | 0.035 | 0.028 | - | - |
| b | 0.350 | 0.250 | 0.014 | 0.010 | - | - |
| c | 0.250 | 0.100 | 0.010 | 0.004 | - | - |
| D | 3.500 | 3.050 | 0.138 | 0.120 | - | - |
| D1 | 3.200 | 2.900 | 0.126 | 0.114 | - | - |
| D2 | 1.950 | 1.350 | 0.077 | 0.053 | - | - |
| E | 3.400 | 3.000 | 0.134 | 0.118 | - | - |
| E1 | 3.300 | 2.900 | 0.130 | 0.114 | - | - |
| E2 | 2.600 | 2.350 | 0.102 | 0.093 | - | - |
| e | 0.650 BSC | 0.026 BSC | - | - | - | - |
| H | 0.750 | 0.300 | 0.030 | 0.012 | - | - |
| L | 0.600 | 0.300 | 0.024 | 0.012 | - | - |
| L1 | 0.200 | 0.060 | 0.008 | 0.002 | - | - |
| θ | 14° | 6° | 14° | 6° | - | - |
Notes:
1 Repetitive rating: Pulsed width limited by maximum junction temperature.
2 VDD=25V, VGS=10V, L=0.1mH, IAS=51A, RG=25Ω, starting TJ=25°C.
3 Pulse test: pulse width ≤300μs, duty cycle ≤2%.
4 Essentially independent of operating temperature.
2411201841_Suzhou-Good-Ark-Elec-SSFN4903_C19841900.pdf
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