Low voltage drop transistor Slkor 2SC5585 featuring high current capability for power electronics

Key Attributes
Model Number: 2SC5585
Product Custom Attributes
Current - Collector Cutoff:
100nA
Emitter-Base Voltage(Vebo):
6V
DC Current Gain:
680@10mA,2V
Transition Frequency(fT):
320MHz
Vce Saturation(VCE(sat)):
250mV@200mA,10mA
Pd - Power Dissipation:
150mW
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
12V
Mfr. Part #:
2SC5585
Package:
SOT-523
Product Description

Product Overview

This NPN transistor offers high current capability with a low VCE(sat) of 250mV at IC = 200mA / IB = 10mA. It is suitable for applications requiring efficient power handling and low voltage drop. The transistor is available in a SOT-523 package.

Product Attributes

  • Marking: BX
  • Package Type: SOT-523 Plastic-Encapsulate Transistors

Technical Specifications

Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage V(BR)CBO IC=10A, IE=0 15 V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 12 V
Emitter-base breakdown voltage V(BR)EBO IE=10A, IC=0 6 V
Collector cut-off current ICBO VCB=15 V, IE=0 0.1 A
Emitter cut-off current IEBO VEB=6V, IC=0 0.1 A
DC current gain hFE VCE=2V, IC=10mA 270 680
Collector-emitter saturation voltage VCE(sat) IC=200mA,IB=10mA 0.25 V
Transition frequency fT VCE=2V,IC=10mA, f=100MHz 320 MHz
Collector output capacitance Cob VCB=10V,IE=0,f=1MHz 7.5 pF
Parameter Symbol Value Unit
Collector- Base Voltage VCBO 15 V
Collector-Emitter Voltage VCEO 12 V
Emitter-Base Voltage VEBO 6 V
Collector Current -Continuous IC 0.5 A
Collector Power Dissipation PC 0.15 W
Junction Temperature TJ 150
Storage Temperature Tstg -55-150
Pin Name
1 BASE
2 EMITTER
3 COLLECTOR

2508051530_Slkor-2SC5585_C50087593.pdf

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