Suzhou Good Ark Elec SSFN2603 Low On Resistance P Channel MOSFET 20V for Switching Applications
Key Attributes
Model Number:
SSFN2603
Product Custom Attributes
Current - Continuous Drain(Id):
60A
RDS(on):
8mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
800pF
Output Capacitance(Coss):
1nF
Input Capacitance(Ciss):
8nF
Pd - Power Dissipation:
62.5W
Gate Charge(Qg):
80nC@4.5V
Mfr. Part #:
SSFN2603
Product Description
Product Overview
The SSFN2603 is a 20V P-Channel MOSFET designed for high efficiency applications. It utilizes advanced MOSFET process technology to achieve high cell density and low on-resistance, making it ideal for switched-mode power supplies. Key benefits include fast switching, reverse body recovery, and low on-resistance with low gate charge, ensuring high efficiency and reliability.
Product Attributes
- Brand: Goodarksemi (implied by domain www.goodarksemi.com)
- Product Type: P-Channel MOSFET
- Package Type: PPAK3x3
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Main Product Characteristics | ||||||
| Drain-Source Voltage | V(BR)DSS | -20 | V | |||
| On-Resistance | RDS(ON) | 8 | m | |||
| Drain Current (Continuous, TC=25C) | ID | -60 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (TC=25C unless otherwise specified) | -20 | V | ||
| Gate-Source Voltage | VGS | (TC=25C unless otherwise specified) | 12 | V | ||
| Drain Current Continuous (TC=25C) | ID | -60 | A | |||
| Drain Current Continuous (TC=100C) | ID | -38 | A | |||
| Drain Current Pulsed | IDM | -240 | A | |||
| Power Dissipation (TC=25C) | PD | 62.5 | W | |||
| Power Dissipation Derate above 25C | 0.5 | W/C | ||||
| Storage Temperature Range | TSTG | -55 | +150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | +150 | C | ||
| Thermal Resistance Junction to Ambient | RJA | 62 | C/W | |||
| Thermal Resistance Junction to Case | RJC | 2 | C/W | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250uA | -20 | V | ||
| BVDSS Temperature Coefficient | BVDSS/TJ | Reference to 25C, ID=-1mA | -0.01 | V/C | ||
| Drain-Source Leakage Current | IDSS | VDS=-20V, VGS=0V, TJ=25C | -1 | uA | ||
| Drain-Source Leakage Current | IDSS | VDS=-16V, VGS=0V, TJ=125C | -10 | uA | ||
| Gate-Source Leakage Current | IGSS | VGS=12V, VDS=0V | 100 | nA | ||
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V, ID=-8A | 6 | 8 | m | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-2.5V, ID=-5A | 8 | 11 | m | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-1.8V, ID=-3A | 11 | 16 | m | |
| Gate Threshold Voltage | VGS(th) | VGS=VDS, ID=-250uA | -0.3 | -0.6 | -1.0 | V |
| Forward Transconductance | gfs | VDS=-10V, ID=-5A | 20 | S | ||
| Total Gate Charge | Qg | VDS=-10V, VGS=-4.5V, ID=-5A | 44.4 | 80 | nC | |
| Gate-Source Charge | Qgs | VDS=-10V, VGS=-4.5V, ID=-5A | 7.2 | 14 | nC | |
| Gate-Drain Charge | Qgd | VDS=-10V, VGS=-4.5V, ID=-5A | 10.2 | 20 | nC | |
| Turn-On Delay Time | Td(on) | VDD=-10V, VGS=-4.5V, RG=25, ID=-1A | 13.2 | 26 | nS | |
| Rise Time | Tr | VDD=-10V, VGS=-4.5V, RG=25, ID=-1A | 68 | 120 | nS | |
| Turn-Off Delay Time | Td(off) | VDD=-10V, VGS=-4.5V, RG=25, ID=-1A | 160 | 320 | nS | |
| Fall Time | Tf | VDD=-10V, VGS=-4.5V, RG=25, ID=-1A | 154 | 300 | nS | |
| Input Capacitance | Ciss | VDS=-15V, VGS=0V, F=1MHz | 4060 | 8000 | pF | |
| Output Capacitance | Coss | VDS=-15V, VGS=0V, F=1MHz | 520 | 1000 | pF | |
| Reverse Transfer Capacitance | Crss | VDS=-15V, VGS=0V, F=1MHz | 400 | 800 | pF | |
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||
| Continuous Source Current | IS | VG=VD=0V, Force Current | -60 | A | ||
| Pulsed Source Current | ISM | -120 | A | |||
| Diode Forward Voltage | VSD | VGS=0V, IS=-1A, TJ=25C | -1 | V | ||
| Package Outline Dimensions (PPAK3x3) | ||||||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||||
| MIN | MAX | MIN | MAX | |||
| A | 0.700 | 0.900 | 0.028 | 0.035 | ||
| b | 0.250 | 0.350 | 0.010 | 0.014 | ||
| c | 0.100 | 0.250 | 0.004 | 0.010 | ||
| D | 3.050 | 3.500 | 0.120 | 0.138 | ||
| D1 | 2.900 | 3.200 | 0.114 | 0.126 | ||
| D2 | 1.350 | 1.950 | 0.053 | 0.077 | ||
| E | 3.000 | 3.400 | 0.118 | 0.134 | ||
| E1 | 2.900 | 3.300 | 0.114 | 0.130 | ||
| E2 | 2.350 | 2.600 | 0.093 | 0.102 | ||
| e | 0.650 BSC | 0.026 BSC | ||||
| H | 0.300 | 0.750 | 0.012 | 0.030 | ||
| L | 0.300 | 0.600 | 0.012 | 0.024 | ||
| L1 | 0.060 | 0.200 | 0.002 | 0.008 | ||
| 6 | 14 | 6 | 14 | |||
2411201842_Suzhou-Good-Ark-Elec-SSFN2603_C19841896.pdf
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