SL3139KDW Dual P Channel MOSFET with Lead Free Surface Mount Package and Low Logic Level Gate Drive
Key Attributes
Model Number:
SL3139KDW
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
660mA
RDS(on):
380mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
650mV@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
8.8pF
Number:
2 P-Channel
Pd - Power Dissipation:
150mW
Output Capacitance(Coss):
15pF
Input Capacitance(Ciss):
115pF
Gate Charge(Qg):
1.25nC@4.5V
Mfr. Part #:
SL3139KDW
Package:
SOT-363
Product Description
SL3139KDW -20V/-0.66A Dual P-Channel MOSFET
The SL3139KDW is a dual P-Channel MOSFET designed for load and power switching applications. It features low RDS(on) and operates at low logic level gate drive, making it suitable for interfacing and battery management in ultra-small portable electronics. This lead-free product comes in a surface mount package.
Product Attributes
- Lead Free Product is Acquired
- Surface Mount Package
- P-Channel Switch with Low RDS(on)
- Operated at Low Logic Level Gate Drive
Technical Specifications
| Parameter | Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Absolute Maximum Ratings | |||||
| Drain-Source Voltage | -20 | V | |||
| Gate-Source Voltage | 10 | V | |||
| Maximum Junction Temperature | 150 | C | |||
| Storage Temperature Range | -55 | 150 | C | ||
| Diode Continuous Forward Current | Tc=25C | -0.66 | A | ||
| Pulse Drain Current | Tc=25C | -2.65 | A | ||
| Tested Continuous Drain Current | Tc=25C, GS=10V | -0.66 | A | ||
| Maximum Power Dissipation | TA=25 | 0.15 | W | ||
| Thermal Resistance Junction-to-Ambient | 833 | C/W | |||
| Static Electrical Characteristics | |||||
| Drain-Source Breakdown Voltage | VGS=0VID=-250A | -20 | V | ||
| Zero Gate Voltage Drain Current | VDS=-20VVGS=0V | -1 | uA | ||
| Gate-Body Leakage Current | VGS=10VVDS=0V | 10 | uA | ||
| Gate Threshold Voltage | VDS=VGSID=-250A | -0.35 | -0.65 | -1.1 | V |
| Drain-Source On-State Resistance | VGS=-4.5VID=-1.0A | 380 | 520 | m | |
| VGS=-2.5VID=-0.8A | 520 | 700 | m | ||
| VGS=-1.8VID=-0.5A | 750 | m | |||
| Dynamic Electrical Characteristics | |||||
| Input Capacitance | VDS=-10VVGS=0V f=1MHz | 115 | pF | ||
| Output Capacitance | VDS=-10VVGS=0V f=1MHz | 15 | pF | ||
| Reverse Transfer Capacitance | VDS=-10VVGS=0V f=1MHz | 8.8 | pF | ||
| Total Gate Charge | VDD=-10VID=-0.5A VGS=-4.5V | 1.25 | nC | ||
| Gate Source Charge | VDD=-10VID=-0.5A VGS=-4.5V | 0.35 | nC | ||
| Gate Drain Charge | VDD=-10VID=-0.5A VGS=-4.5V | 0.29 | nC | ||
| Turn-on Delay Time | VDS=-10VID=-0.2A VGS=-4.5VRG=10 | 9 | nS | ||
| Turn-on Rise Time | VDS=-10VID=-0.2A VGS=-4.5VRG=10 | 5.5 | nS | ||
| Turn-Off Delay Time | VDS=-10VID=-0.2A VGS=-4.5VRG=10 | 30.8 | nS | ||
| Turn-Off Fall Time | VDS=-10VID=-0.2A VGS=-4.5VRG=10 | 20 | nS | ||
| Source-Drain Diode Forward on voltage | Tj=25Is=-0.66A | -1.2 | V | ||
2412171034_Slkor-SL3139KDW_C42415164.pdf
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