3A Super Fast Rectifier Taiwan Semiconductor S3ABH for Automotive and DC to DC Converter Applications

Key Attributes
Model Number: S3ABH
Product Custom Attributes
Mfr. Part #:
S3ABH
Package:
DO-214AA(SMB)
Product Description

Product Overview

The ES3ABH to ES3JBH series are 3A Super Fast Surface Mount Rectifiers from Taiwan Semiconductor, designed for high-efficiency applications. These AEC-Q101 qualified rectifiers feature a glass-passivated chip junction, low profile package, and super fast recovery time, making them ideal for automated placement. They are suitable for various applications including DC to DC converters, automotive systems, car lighting, snubbers, and freewheeling circuits.

Product Attributes

  • Brand: Taiwan Semiconductor
  • Certifications: AEC-Q101 qualified, RoHS Compliant, Halogen-free according to IEC 61249-2-21
  • Material: Glass passivated chip junction, Molding compound meets UL 94V-0 flammability rating, Matte tin plated leads
  • Package: DO-214AA (SMB)
  • Moisture Sensitivity Level: Level 1, per J-STD-0020

Technical Specifications

ParameterSymbolES3ABHES3BBHES3CBHES3DBHES3FBHES3GBHES3HBHES3JBHUnit
KEY PARAMETERS
Forward CurrentIF3A
Repetitive Peak Reverse VoltageVRRM50100150200300400500600V
Surge Peak Forward Current (8.3ms)IFSM100A
Maximum Junction TemperatureTJ MAX150C
ABSOLUTE MAXIMUM RATINGS
Repetitive peak reverse voltageVRRM50100150200300400500600V
Reverse voltage, total rms valueVR(RMS)3570105140210280350420V
Forward currentIF3A
Surge peak forward current, 8.3ms single half sine-waveIFSM100A
Junction temperatureTJ -55 to +150C
Storage temperatureTSTG -55 to +150C
THERMAL PERFORMANCE
Junction-to-lead thermal resistanceRJL24C/W
Junction-to-ambient thermal resistanceRJA84C/W
Junction-to-case thermal resistanceRJC26C/W
ELECTRICAL SPECIFICATIONS
Forward voltage (IF = 1.5A, TJ = 25C)VF0.800.920.800.920.901.041.111.30V
Forward voltage (IF = 3.0A, TJ = 25C)VF0.861.000.861.000.981.131.241.45V
Forward voltage (IF = 1.5A, TJ = 125C)VF0.660.750.660.750.730.850.850.98V
Forward voltage (IF = 3.0A, TJ = 125C)VF0.730.840.730.840.830.950.991.13V
Reverse current @ rated VR (TJ = 25C)IR -10 A
Reverse current @ rated VR (TJ = 125C)IR -100 A
Junction capacitance (1MHz, VR = 4.0V)CJ4646464641413434pF
Reverse recovery time (IF = 0.5A, IR = 1.0A, Irr = 0.25A)trr -35 ns

2401230917_Taiwan-Semiconductor-S3ABH_C17188240.pdf

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