High cell density Slkor SL2305S trenched P channel MOSFET for synchronous buck converter efficiency
Key Attributes
Model Number:
SL2305S
Product Custom Attributes
Drain To Source Voltage:
20V
Configuration:
-
Current - Continuous Drain(Id):
4A
RDS(on):
45mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
85pF@10V
Number:
1 P-Channel
Pd - Power Dissipation:
1.31W
Input Capacitance(Ciss):
830pF@10V
Gate Charge(Qg):
8.8nC@4.5V
Mfr. Part #:
SL2305S
Package:
SOT-23
Product Description
Product Overview
The SL2305S is a high cell density trenched P-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(on) and low gate charge, contributing to efficient power conversion. This device meets RoHS and Green Product requirements and has undergone full function reliability approval.
Product Attributes
- Brand: SLKORMicro
- Certifications: RoHS, Green Product
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Units |
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | - | - | -20 | V | |
| VGS | Gate-Source Voltage | - | - | 12 | V | |
| ID@TA=25 | Continuous Drain Current, VGS @ -4.5V | - | -4.0 | - | A | |
| ID@TA=70 | Continuous Drain Current, VGS @ -4.5V | - | -3.0 | - | A | |
| IDM | Pulsed Drain Current | - | - | -16 | A | |
| PD@TA=25 | Total Power Dissipation | - | - | 1.31 | W | |
| PD@TA=70 | Total Power Dissipation | - | - | 0.84 | W | |
| TSTG | Storage Temperature Range | -55 | - | 150 | ||
| TJ | Operating Junction Temperature Range | -55 | - | 150 | ||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-Ambient | - | - | 125 | /W | |
| Electrical Characteristics (TJ=25unless otherwise specified) | ||||||
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Units |
| Off Characteristic | ||||||
| V(BR)DSS | Drain-Source Breakdown Voltage | VGS=0V, ID= -250A | -20 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS= -20V, VGS=0V | - | - | -1 | A |
| IGSS | Gate to Body Leakage Current | VDS=0V, VGS= 12V | - | - | 100 | nA |
| On Characteristic | ||||||
| VGS(th) | Gate Threshold Voltage | VDS=VGS, ID= -250A | -0.4 | -0.7 | -1.0 | V |
| RDS(on) | Static Drain-Source on-Resistance | VGS= -4.5V, ID= -4.1A | - | 35 | 45 | m |
| RDS(on) | Static Drain-Source on-Resistance | VGS= -2.5V, ID= -3A | - | 43 | 63 | m |
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VDS= -10V, VGS=0V, f=1.0MHz | - | 830 | - | pF |
| Coss | Output Capacitance | - | 132 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | 85 | - | pF | |
| Qg | Total Gate Charge | VDS= -10V, ID= -2A, VGS= -4.5V | - | 8.8 | - | nC |
| Qgs | Gate-Source Charge | - | 1.4 | - | nC | |
| Qgd | Gate-Drain(Miller) Charge | - | 1.9 | - | nC | |
| Switching Characteristics | ||||||
| td(on) | Turn-on Delay Time | VDD= -10V, ID= -3.3A, RG= 1, VGEN= -4.5V | - | 10 | - | ns |
| tr | Turn-on Rise Time | - | 32 | - | ns | |
| td(off) | Turn-off Delay Time | - | 50 | - | ns | |
| tf | Turn-off Fall Time | - | 51 | - | ns | |
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||
| IS | Maximum Continuous Drain to Source Diode Forward Current | - | - | -4.0 | A | |
| ISM | Maximum Pulsed Drain to Source Diode Forward Current | - | - | -16 | A | |
| VSD | Drain to Source Diode Forward Voltage | VGS=0V, IS= -4.1A | - | - | -1.2 | V |
2411220025_Slkor-SL2305S_C41369468.pdf
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