Glass passivated chip junction rectifier Taiwan Semiconductor S2GHM4G designed for automated placement
Key Attributes
Model Number:
S2GHM4G
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
50A
Voltage - DC Reverse (Vr) (Max):
400V
Reverse Leakage Current (Ir):
1uA
Voltage - Forward(Vf@If):
1.15V@2A
Current - Rectified:
2A
Mfr. Part #:
S2GHM4G
Package:
DO-214AA
Product Description
Product Overview
The S2AH S2VH series are AEC-Q101 qualified, glass-passivated surface mount rectifiers designed for automated placement. They offer a low forward voltage drop and high surge current capability, making them ideal for various automotive and power conversion applications. These rectifiers are RoHS compliant and halogen-free.
Product Attributes
- Brand: Taiwan Semiconductor
- Origin: Taiwan Semiconductor
- Certifications: AEC-Q101 qualified, RoHS Compliant, Halogen-free according to IEC 61249-2-21
- Material: Glass passivated chip junction, Molding compound meets UL 94V-0 flammability rating, Matte tin plated leads
- Moisture Sensitivity Level: Level 1, per J-STD-020
Technical Specifications
| Parameter | Symbol | S2AH | S2B H | S2D H | S2G H | S2J H | S2K H | S2M H | S2Q H | S2V H | Unit |
| Marking code on the device | S2A | S2B | S2D | S2G | S2J | S2K | S2M | S2Q | S2V | ||
| Repetitive peak reverse voltage | VRRM | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | 1200 | 1400 | V |
| Reverse voltage, total rms value | VR(RMS) | 35 | 70 | 140 | 280 | 420 | 560 | 700 | 840 | 980 | V |
| Forward current | IF | 2 | A | ||||||||
| Surge peak forward current, 8.3ms single half sine-wave superimposed on rated load | IFSM | 50 | A | ||||||||
| Junction temperature | TJ | - 55 to +150 | C | ||||||||
| Storage temperature | TSTG | - 55 to +150 | C | ||||||||
| Junction-to-lead thermal resistance | RJL | 16 | C/W | ||||||||
| Junction-to-ambient thermal resistance | RJA | 53 | C/W | ||||||||
| Forward voltage (IF = 2A, TJ = 25C) | VF | 1.15 | V | ||||||||
| Reverse current @ rated VR (TJ = 25C) | IR | 1 | A | ||||||||
| Reverse current @ rated VR (TJ = 125C) | IR | 125 | A | ||||||||
| Junction capacitance (1MHz, VR = 4.0V) | CJ | 30 | pF | ||||||||
| Reverse recovery time (IF = 0.5A, IR = 1.0A, Irr = 0.25A) | trr | 1500 | ns | ||||||||
2205311716_Taiwan-Semiconductor-S2GHM4G_C3028985.pdf
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