N Channel MOSFET 20V 2A Slkor FDN327N Featuring Trench Power LV Technology for PWM Load Switching
Key Attributes
Model Number:
FDN327N
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
2A
RDS(on):
70mΩ@4.5V,2A
Gate Threshold Voltage (Vgs(th)):
1.5V
Reverse Transfer Capacitance (Crss@Vds):
25pF@10V
Number:
1 N-channel
Input Capacitance(Ciss):
222pF@10V
Pd - Power Dissipation:
500mW
Gate Charge(Qg):
3.6nC@10V
Mfr. Part #:
FDN327N
Package:
SOT-23
Product Description
FDN327N - 20V/2A N-Channel MOSFET
The FDN327N is an N-Channel MOSFET featuring Trench Power LV MOSFET technology, offering high power and current handling capabilities. It is designed for applications such as PWM and load switching.
Product Attributes
- Brand: slkormicro
- Model: FDN327N
- Revision: Rev.1
- Date: 23 July 2020
Technical Specifications
| Parameter | Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Absolute Maximum Ratings | |||||
| Drain-Source Voltage (VDS) | 20 | V | |||
| Gate-Source Voltage (VGS) | 8 | V | |||
| Junction Temperature (TJ) | 150 | C | |||
| Storage Temperature Range (TSTG) | -50 | to | 155 | C | |
| Diode Continuous Forward Current (IS) | Tc=25C | 2 | A | ||
| Pulse Drain Current (IDM) | Tc=25C | 8 | A | ||
| Tested Continuous Drain Current (ID) | Tc=25C | 2 | A | ||
| Maximum Power Dissipation (PD) | 0.5 | W | |||
| Thermal Resistance Junction-to-Ambient (RJA) | Mounted on Large Heat Sink | 250 | C/W | ||
| Electrical Characteristics | |||||
| Drain-Source Breakdown Voltage (BV(BR)DSS) | VGS=0VID=250A | 20 | V | ||
| Zero Gate Voltage Drain Current (IDSS) | VDS=16VVGS=0V | 1 | uA | ||
| Gate-Body Leakage Current (IGSS) | VGS=8VVDS=0V | 100 | nA | ||
| Gate Threshold Voltage (VGS(th)) | VDS=VGSID=250A | 0.4 | 0.7 | 1.5 | V |
| Drain-Source On-State Resistance (RDS(on)) | VGS=4.5VID=2.0A | 40 | 70 | m | |
| Drain-Source On-State Resistance (RDS(on)) | VGS=2.5VID=1.9A | 49 | 80 | m | |
| Drain-Source On-State Resistance (RDS(on)) | VGS=1.8VID=1.6A | 80 | 120 | m | |
| Input Capacitance (CISS) | VDS=10VVGS=0V f=1MHz | 222 | pF | ||
| Output Capacitance (COSS) | VDS=10VVGS=0V f=1MHz | 35 | pF | ||
| Reverse Transfer Capacitance (CRSS) | VDS=10VVGS=0V f=1MHz | 25 | pF | ||
| Total Gate Charge (Qg) | VDD=10VID=2.5A VGS=10VRG=3 | 3.6 | nC | ||
| Gate Source Charge (Qgs) | VDD=10VID=2.5A VGS=10VRG=3 | 0.9 | nC | ||
| Gate Drain Charge (Qgd) | VDD=10VID=2.5A VGS=10VRG=3 | 0.75 | nC | ||
| Forward on voltage (VSD) | Tj=25Is=3A | 1.2 | V | ||
| Switching Characteristics | |||||
| Turn-on Delay Time (td(on)) | VDD=10VID=2.5A VGS=10VRG=3 | 6.8 | nS | ||
| Turn-on Rise Time (tr) | VDD=10VID=2.5A VGS=10VRG=3 | 57 | nS | ||
| Turn-Off Delay Time (td(off)) | VDD=10VID=2.5A VGS=10VRG=3 | 14 | nS | ||
| Turn-Off Fall Time (tf) | VDD=10VID=2.5A VGS=10VRG=3 | 55 | nS | ||
2409302203_Slkor-FDN327N_C19188372.pdf
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