Durable P Channel MOSFET Slkor SL4485 Featuring Ultra Low Rds on and High Power Dissipation Capacity
Key Attributes
Model Number:
SL4485
Product Custom Attributes
Drain To Source Voltage:
40V
Configuration:
-
Current - Continuous Drain(Id):
10A
Operating Temperature -:
-
RDS(on):
20mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
300pF@20V
Number:
1 P-Channel
Input Capacitance(Ciss):
2.98nF@20V
Pd - Power Dissipation:
3.2W
Gate Charge(Qg):
-
Mfr. Part #:
SL4485
Package:
SOP-8
Product Description
Product Overview
The SL4485 is a P-Channel MOSFET designed for high-density applications requiring ultra-low Rds(on). It features a fully characterized avalanche voltage and current, and an excellent package for efficient heat dissipation. This MOSFET is suitable for PWM applications, power management, and load switching.
Product Attributes
- Brand: SLKormicro
- Model: SL4485
- Package: SOP-8
Technical Specifications
| Parameter | Condition | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | |||||
| VDS | Drain-Source Voltage | -40 | V | ||
| VGS | Gate-Source Voltage | ±20 | V | ||
| TJ | Maximum Junction Temperature | 150 | °C | ||
| TSTG | Storage Temperature Range | -55 | 150 | °C | |
| ID | Tested Continuous Drain Current@GS=10V, Tc=25°C | -10 | A | ||
| IDM | Pulse Drain Current, Tc=25°C | -45 | A | ||
| IS | Diode Continuous Forward Current, Tc=25°C | -10 | A | ||
| PD | Maximum Power Dissipation, Mounted on Large Heat Sink | 3.2 | W | ||
| RθJA | Thermal Resistance Junction-to-Ambient | 40 | °C/W | ||
| Electrical Characteristics (TJ=25°C unless otherwise noted) | |||||
| BV(BR)DSS | Drain-Source Breakdown Voltage, VGS=0V, ID=-250μA | -40 | V | ||
| IDSS | Zero Gate Voltage Drain Current, VDS=-40V, VGS=0V | -1 | μA | ||
| IGSS | Gate-Body Leakage Current, VGS=±20V, VDS=0V | ±100 | nA | ||
| VGS(th) | Gate Threshold Voltage, VDS=VGS, ID=-250μA | -1.0 | -1.8 | -2.5 | V |
| RDS(on) | Drain-Source On-State Resistance, VGS=-10V, ID=-12A | 11 | 15 | mΩ | |
| Drain-Source On-State Resistance, VGS=-4.5V, ID=-10A | 16 | 20 | mΩ | ||
| Capacitance | Input Capacitance (CISS), VDS=-20V, VGS=0V, f=1MHz | 2980 | pF | ||
| Output Capacitance (COSS), VDS=-20V, VGS=0V, f=1MHz | 380 | pF | |||
| Reverse Transfer Capacitance (CRSS), VDS=-20V, VGS=0V, f=1MHz | 300 | pF | |||
| Switching Characteristics @ TJ = 25°C (unless otherwise stated) | |||||
| Gate Charge | Total Gate Charge (Qg), VDS=-20V, ID=-12A, VGS=-10V | 75 | nC | ||
| Gate Source Charge (Qgs), VDS=-20V, ID=-12A, VGS=-10V | 14 | nC | |||
| Gate Drain Charge (Qgd), VDS=-20V, ID=-12A, VGS=-10V | 15 | nC | |||
| Delay Times | Turn-on Delay Time (td(on)), VDD=-12V, ID=-1A, VGS=-10V, RG=3.3Ω | 10 | nS | ||
| Turn-off Delay Time (td(off)), VDD=-12V, ID=-1A, VGS=-10V, RG=3.3Ω | 38 | nS | |||
| Rise/Fall Times | Turn-on Rise Time (tr), VDD=-12V, ID=-1A, VGS=-10V, RG=3.3Ω | 17 | nS | ||
| Turn-off Fall Time (tf), VDD=-12V, ID=-1A, VGS=-10V, RG=3.3Ω | 25 | nS | |||
| Source-Drain Diode Characteristics | |||||
| VSD | Forward On Voltage, Tj=25°C, Is=-20A | -1.2 | V | ||
2411121620_Slkor-SL4485_C42380665.pdf
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