Battery and load switching MOSFET Slkor SL40P03G with ultra low RDS ON in compact PDFN3X3 8L package

Key Attributes
Model Number: SL40P03G
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
40A
RDS(on):
14mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.2V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
266pF
Number:
1 P-Channel
Output Capacitance(Coss):
305pF
Input Capacitance(Ciss):
1.988nF
Pd - Power Dissipation:
30W
Gate Charge(Qg):
35nC@10V
Mfr. Part #:
SL40P03G
Package:
PDFN-8L(3x3)
Product Description

Product Overview

The SL40P03G is a high-density P-Channel MOSFET designed for efficient battery and loading switching applications. It features an ultra-low RDS(ON) due to its advanced cell design, fully characterized avalanche voltage and current, and excellent stability and uniformity. The MOSFET is housed in a PDFN3X3-8L package, offering good heat dissipation for demanding applications.

Product Attributes

  • Brand: slkormicro
  • Package Type: PDFN3X3-8L

Technical Specifications

ParameterConditionMinTypMaxUnit
Absolute Maximum RatingsVDS-30V
VGS±20V
EAS77mJ
Common RatingsTJ,TSTG-55175°C
ISTc=25°C-40A
IDMTc=25°C-180A
IDTc=25°C-40A
PDTA=25°C55W
Thermal ResistanceRθJA30°C/W
Electrical CharacteristicsBV(BR)DSSVGS=0V, ID=-250μA-30V
IDSSVDS=-30V, VGS=0V-1μA
IGSSVGS=±20V, VDS=0V±100nA
VGS(th)VDS=VGS, ID=-250μA-1-1.5-2.2V
RDS(on)VGS=-10V, ID=-15A8.810
VGS=-4.5V, ID=-10A1214
CISSVDS=-15V, VGS=0V, f=1MHz1988pF
COSSVDS=-15V, VGS=0V, f=1MHz305pF
CRSSVDS=-15V, VGS=0V, f=1MHz266pF
QgVDD=-15V, ID=-1A, VGS=-10V, RG=2.5Ω35nC
Switching Characteristicstd(on)VDD=-15V, ID=-1A, VGS=-10V, RG=2.5Ω11nS
trVDD=-15V, ID=-1A, VGS=-10V, RG=2.5Ω7.7nS
td(off)VDD=-15V, ID=-1A, VGS=-10V, RG=2.5Ω43.3nS
tfVDD=-15V, ID=-1A, VGS=-10V, RG=2.5Ω18nS
Source-Drain Diode CharacteristicsVSDTj=25°C, Is=-12A-1.2V

2409302203_Slkor-SL40P03G_C22392328.pdf

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