86--136 6733 2386
quality High power gain silicon epitaxial transistor Slkor BFU580Q designed for CATV video amplifiers and remote controls factory
quality High power gain silicon epitaxial transistor Slkor BFU580Q designed for CATV video amplifiers and remote controls factory

High power gain silicon epitaxial transistor Slkor BFU580Q designed for CATV video amplifiers and remote controls

Key Attributes
Model Number: BFU580Q
Product Custom Attributes
Emitter-Base Voltage(Vebo):
3V
Current - Collector Cutoff:
50nA
DC Current Gain:
95@30mA,8V
Type:
NPN
Pd - Power Dissipation:
1W
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
12V
Operating Temperature:
-40℃~+150℃@(Tj)
Mfr. Part #:
BFU580Q
Package:
SOT-89
Product Description

Product Overview

The BFU580Q is an NPN silicon epitaxial transistor designed for high-performance microwave and high-frequency applications. Manufactured using silicon epitaxial technology, it offers high power gain, wide bandwidth, low noise, low leakage current, and small junction capacitance. Its larger dynamic range and excellent current linearity make it ideal for medium-power, high-frequency signal amplification. Key applications include CATV video amplifiers, wireless transceiver modules, long-range remote controls, security alarms, and analog/digital cordless phones.

Product Attributes

  • Brand: SLKOR
  • Model: BFU580Q
  • Marking: S58
  • Package Type: SOT89
  • Material: Silicon Epitaxial

Technical Specifications

Parameter Symbol Test Conditions Min Typical Max Unit
Absolute Maximum Ratings (Tamb=25)
Collector-Base Voltage VCBO 25 V
Collector-Emitter Voltage VCEO 12 V
Emitter-Base Voltage VEBO 3 V
Collector Current ICM 100 mA
Power Dissipation PT 1000 mW
Max Junction Temperature TJ -40 150
Storage Temperature Tstg -65 150
Electrical Characteristics (Tamb=25)
Collector-Base Breakdown Voltage BVCBO open emitter 25 V
Collector-Emitter Breakdown Voltage BVCEO open base 12 V
Emitter-Base Breakdown Voltage BVEBO open collector 3 V
Collector Current IC 100 mA
Collector Cutoff Current ICBO VCB=6V, IE=0 0.05 A
DC Current Gain hFE VCE=8V, IC=30mA 60 95 130
Characteristic Frequency fT VCE=8V, IC=30mA, f=900MHz 10.0 10.5 - GHz
Feedback Capacitance Cre IC=iC=0, VCB=8V, f=1MHz 1.2 - pF
Collector Capacitance CC IE=ie=0, VCB=8V, f=1MHz 1.8 - pF
Emitter Capacitance Ce IC=iC=0, VEB=0.5V, f=1MHz 3.0 - pF
Insertion Power Gain |S21| IC=30mA, VCE=8V, f=433MHz 18.0 18.5 - dB
Insertion Power Gain |S21| IC=30mA, VCE=8V, f=900MHz 13.5 14 - dB
Insertion Power Gain |S21| IC=30mA, VCE=8V, f=1800MHz 8.0 8.5 - dB
Max Unilateral Power Gain GUM IC=30mA, VCE=8V, f=433MHz 19.5 20 - dB
Max Unilateral Power Gain GUM IC=30mA, VCE=8V, f=900MHz 13.5 14 - dB
Max Unilateral Power Gain GUM IC=30mA, VCE=8V, f=1.8GHz 8.0 8.5 - dB
Package Dimensions (Units:mm)
Length 4.2 0.05 mm
Width 4.6 0.1 mm
Height 1.6 0.15 mm
Pitch (Pin 1 to Pin 3) 2.5 0.2 mm
Pin Width 0.45 0.1 mm

2409271503_Slkor-BFU580Q_C7496600.pdf

Related Products
quality NPN transistor YTL MMBTH10 with 30V collector base breakdown voltage and 650MHz transition frequency factory
NPN transistor YTL MMBTH10 with 30V collector base breakdown voltage and 650MHz transition frequency
Product OverviewThe MMBTH10 is an NPN transistor in a SOT-23 package, designed for general-purpose applications. It offers a breakdown voltage of 30V (V(BR)CBO) and 25V (V(BR)CEO), with a DC current gain (hFE) of 60 at 10V VCE and 4mA IC. Its low collector-emitter saturation voltage (VCE(sat)) of 0...
quality General purpose NPN transistor YANGJIE BCX56 with tin plated leads and low saturation voltage factory
General purpose NPN transistor YANGJIE BCX56 with tin plated leads and low saturation voltage
Product OverviewThe BCX56 is an NPN General Purpose Amplifier from Yangzhou Yangjie Electronic Technology Co., Ltd. It features a low collector-emitter saturation voltage and is housed in a SOT-89 package with UL-94 V-0 flammability rating. Halogen-free options are available upon request. This ...
quality Robust industrial IGBT module YANGJIE MG50HF12TLC1 with low VCEsat and high short circuit capability factory
Robust industrial IGBT module YANGJIE MG50HF12TLC1 with low VCEsat and high short circuit capability
Product OverviewThe MG50HF12TLC1 S-M392 is a high-performance IGBT module designed for inverter applications, AC/DC servo drive amplifiers, UPS systems, and soft switching welding machines. It features low VCE(sat) with Trench technology, a positive temperature coefficient for VCE(sat), high short ...
quality Surface mount digital transistor YANGJIE DTC114YE with built in resistors and RoHS compliant halogen free epoxy factory
Surface mount digital transistor YANGJIE DTC114YE with built in resistors and RoHS compliant halogen free epoxy
Product OverviewThe DTC114YE is a digital transistor with built-in resistors, designed for surface mount applications and ideally suited for automatic insertion. It features a moisture sensitivity level of 1 and an epoxy that meets UL-94 V-0 flammability rating and is halogen-free. This product is ...
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.