N Channel MOSFET Slkor SL15N10A Designed for DC DC Converter Circuits and Power Management Solutions
Key Attributes
Model Number:
SL15N10A
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
15A
Operating Temperature -:
-55℃~+175℃
RDS(on):
115mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Reverse Transfer Capacitance (Crss@Vds):
30pF
Number:
1 N-channel
Output Capacitance(Coss):
33pF
Input Capacitance(Ciss):
1.07nF
Pd - Power Dissipation:
34W
Gate Charge(Qg):
26nC@10V
Mfr. Part #:
SL15N10A
Package:
TO-252
Product Description
Product Overview
This N-Channel Enhancement Mode Field Effect Transistor utilizes Trench Power MV MOSFET technology for low RDS(ON) and excellent heat dissipation. Its high-density cell design makes it suitable for DC-DC converters and power management functions.
Product Attributes
- Brand: SLKORMicro (implied by website)
- Model: SL15N10A
- Certifications: 100% UIS Tested, 100% VDS Tested
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit | |
| Drain-source Voltage | VDS | 100 | V | ||||
| Gate-source Voltage | VGS | ±20 | V | ||||
| Drain Current | ID | TC=25 | 15 | A | |||
| Drain Current | ID | TC=100 | 10.5 | A | |||
| Pulsed Drain Current | IDM | 60 | A | ||||
| Single Pulse Avalanche Energy | EAS | 9 | mJ | ||||
| Total Power Dissipation | PD | TC=25 | 34 | W | |||
| Total Power Dissipation | PD | TC=100 | 17 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 4.4 | / W | ||||
| Junction and Storage Temperature Range | TJ ,TSTG | -55 | +175 | ||||
| Drain-Source Breakdown Voltage | BVDSS | VGS= 0V, ID=250A | 100 | V | |||
| Zero Gate Voltage Drain Current | IDSS | VDS=100V,VGS=0V | 1 | µA | |||
| Gate-Body Leakage Current | IGSS | VGS= ±20V, VDS=0V | ±100 | nA | |||
| Gate Threshold Voltage | VGS(th) | VDS= VGS, ID=250µA | 1.1 | 1.8 | 3.0 | V | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS= 10V, ID=8A | 68 | 115 | mΩ | ||
| Static Drain-Source On-Resistance | RDS(ON) | VGS= 4.5V, ID=8A | 75 | 10 | 0 | mΩ | |
| Diode Forward Voltage | VSD | IS=15A,VGS=0V | 0.8 | 1.2 | V | ||
| Maximum Body-Diode Continuous Current | IS | 15 | A | ||||
| Input Capacitance | Ciss | VDS=50V,VGS=0V,f=1MHZ | 1070 | pF | |||
| Output Capacitance | Coss | VDS=50V,VGS=0V,f=1MHZ | 33 | pF | |||
| Reverse Transfer Capacitance | Crss | VDS=50V,VGS=0V,f=1MHZ | 30 | pF | |||
| Total Gate Charge | Qg | VGS=10V,VDS=50V,ID=10A | 26 | nC | |||
| Gate-Source Charge | Qgs | VGS=10V,VDS=50V,ID=10A | 5.4 | ||||
| Gate-Drain Charge | Qg d | VGS=10V,VDS=50V,ID=10A | 5.8 | ||||
| Reverse Recovery Charge | Qrr | IF=10A, di/dt=100A/us | 30.1 | ||||
| Reverse Recovery Time | trr | IF=10A, di/dt=100A/us | 40 | ns | |||
| Turn-on Delay Time | tD(on) | VGS=10V,VDD=50V,RL=6.4Ω, RGEN=3Ω | 7 | ||||
| Turn-on Rise Time | tr | VGS=10V,VDD=50V,RL=6.4Ω, RGEN=3Ω | 24 | ||||
| Turn-off Delay Time | tD(off) | VGS=10V,VDD=50V,RL=6.4Ω, RGEN=3Ω | 24 | ||||
| Turn-off fall Time | tf | VGS=10V,VDD=50V,RL=6.4Ω, RGEN=3Ω | 31 |
2201210930_Slkor-SL15N10A_C2965546.pdf
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