Trench Power LV MOSFET Slkor SL2102 N Channel Transistor Designed for Load Switching and PWM Control
Key Attributes
Model Number:
SL2102
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
2A
Operating Temperature -:
-55℃~+150℃
RDS(on):
68mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
29pF
Number:
1 N-channel
Output Capacitance(Coss):
46pF
Input Capacitance(Ciss):
280pF
Pd - Power Dissipation:
700mW
Gate Charge(Qg):
2.9nC@4.5V
Mfr. Part #:
SL2102
Package:
SOT-323-3
Product Description
Product Overview
The SL2102 is an N-Channel Enhancement Mode Field Effect Transistor featuring Trench Power LV MOSFET technology. It offers high power and current handling capabilities, making it suitable for PWM applications and load switching.
Product Attributes
- Brand: SLKormicro (implied by URL)
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
| Product Summary | ||||||
| Drain-source Voltage | VDS | 20 | V | |||
| Drain Current | ID | 2.0 | A | |||
| RDS(ON) | RDS(ON) | at VGS=4.5V | 68 | mohm | ||
| RDS(ON) | RDS(ON) | at VGS=2.5V | 115 | mohm | ||
| Absolute Maximum Ratings | ||||||
| Drain-source Voltage | VDS | TA=25 | 20 | V | ||
| Gate-source Voltage | VGS | TA=25 | ±10 | V | ||
| Drain Current | ID | TA=25 | 2.0 | A | ||
| Pulsed Drain Current | IDM | TA=25 | 14 | A | ||
| Total Power Dissipation | PD | TA=25 | 0.7 | W | ||
| Thermal Resistance Junction-to-Ambient | RJA | Steady State | 178 | / W | ||
| Junction and Storage Temperature Range | TJ ,TSTG | -55 | +150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS= 0V, ID=250A | 20 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=20V,VGS=0V,TC=25 | 1 | μA | ||
| Gate-Body Leakage Current | IGSS | VGS= ±10V, VDS=0V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS= VGS, ID=250μA | 0.45 | 0.75 | 1.2 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS= 4.5V, ID=2.0A | 50 | 68 | mΩ | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS= 2.5V, ID=1.5A | 65 | 115 | mΩ | |
| Diode Forward Voltage | VSD | IS=2.0A,VGS=0V | 1.2 | V | ||
| Maximum Body-Diode Continuous Current | IS | 2.0 | A | |||
| Input Capacitance | Ciss | VDS=10V,VGS=0V,f=1MHZ | 280 | pF | ||
| Output Capacitance | Coss | VDS=10V,VGS=0V,f=1MHZ | 46 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=10V,VGS=0V,f=1MHZ | 29 | pF | ||
| Total Gate Charge | Qg | VGS=4.5V,VDS=10V,ID=4.3A | 2.9 | nC | ||
| Gate Source Charge | Qgs | VGS=4.5V,VDS=10V,ID=4.3A | 0.4 | |||
| Gate Drain Charge | Qg | VGS=4.5V,VDS=10V,ID=4.3A | 0.6 | |||
| Turn-on Delay Time | tD(on) | VGS=4.5V,VDD=10V, RL=1.5Ω, RGEN=3Ω | 13 | ns | ||
| Turn-on Rise Time | tr | VGS=4.5V,VDD=10V, RL=1.5Ω, RGEN=3Ω | 54 | ns | ||
| Turn-off Delay Time | tD(off) | VGS=4.5V,VDD=10V, RL=1.5Ω, RGEN=3Ω | 18 | ns | ||
| Turn-off Fall Time | tf | VGS=4.5V,VDD=10V, RL=1.5Ω, RGEN=3Ω | 11 | ns | ||
2201210930_Slkor-SL2102_C2965532.pdf
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