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quality Compact SOT23 Package NPN Transistor Slkor FMMT618 Featuring High Current Capacity and PbFree Option factory
quality Compact SOT23 Package NPN Transistor Slkor FMMT618 Featuring High Current Capacity and PbFree Option factory

Compact SOT23 Package NPN Transistor Slkor FMMT618 Featuring High Current Capacity and PbFree Option

Key Attributes
Model Number: FMMT618
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
150nA
DC Current Gain:
600@100mA,1V
Number:
1 NPN
Vce Saturation(VCE(sat)):
500mV@800mA,80mA
Type:
NPN
Pd - Power Dissipation:
225mW
Current - Collector(Ic):
1.8A
Collector - Emitter Voltage VCEO:
25V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
FMMT618
Package:
SOT-23
Product Description

Product Overview

The FMMT618 is an NPN Silicon Epitaxial Planar Transistor designed for general-purpose applications. It offers high current capacity in a compact SOT-23 package, making it suitable for various electronic circuits. A Pb-Free package option is available.

Product Attributes

  • Type: NPN Silicon Epitaxial Planar Transistor
  • Package: SOT-23
  • Feature: High current capacity in compact package (IC = 1.8 A)
  • Feature: Pb-Free Package available
  • Marking: 618

Technical Specifications

Characteristic Symbol Min Typ Max Unit Notes
MAXIMUM RATINGS
Collector-Emitter Voltage VCEO 40 V
Collector-Base Voltage VCBO 40 V
Emitter-Base Voltage VEBO 5 V
Collector Current IC 1800 mAdc
THERMAL CHARACTERISTICS
Total Device Dissipation (FR-5 Board) PD 225 mW TA=25C, Derate above 25C 1.8 mW/C
Thermal Resistance, Junction to Ambient (FR-5 Board) RJA 556 C/W
Total Device Dissipation (Alumina Substrate) PD 300 mW TA=25C, Derate above 25C 2.4 mW/C
Thermal Resistance, Junction to Ambient (Alumina Substrate) RJA 417 C/W
Junction and Storage Temperature Tj, Tstg -55 +150 C
ELECTRICAL CHARACTERISTICS (TA=25C unless otherwise noted)
Collector-Emitter Breakdown Voltage V(BR)CEO 25 - - V IC=1.0mA
Emitter-Base Breakdown Voltage V(BR)EBO 5 - - V IE=100
Collector-Base Breakdown Voltage V(BR)CBO 40 - - V IC=100
Collector Cutoff Current ICBO - - 150 nA VCB=35V
Emitter Cutoff Current IEBO - - 150 nA VEB=4V
DC Current Gain hFE 100 - 600 IC=100mA, VCE=1V
Collector-Emitter Saturation Voltage VCE(S) - - 0.5 V IC=800mA, IB=80mA
Dimensions (mm) MIN MAX
A 2.80 3.04
B 1.20 1.40
C 0.89 1.11
D 0.37 0.50
G 1.78 2.04
H 0.013 0.100
J 0.085 0.177
K 0.35 0.69
L 0.89 1.02
S 2.10 2.64
V 0.45 0.60

Pin Configuration:

  • 1. BASE
  • 2. EMITTER
  • 3. COLLECTOR

2309281726_Slkor-FMMT618_C18208597.pdf

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