P Channel MOSFET SL2309 Featuring 60V Drain Source Voltage and 1.6A Drain Current for Power Management
Key Attributes
Model Number:
SL2309
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
1.6A
Operating Temperature -:
-55℃~+150℃
RDS(on):
200mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.6V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
17.9pF
Number:
1 P-Channel
Input Capacitance(Ciss):
444.2pF@30V
Pd - Power Dissipation:
1.5W
Gate Charge(Qg):
11.3nC@10V
Mfr. Part #:
SL2309
Package:
SOT-23-3
Product Description
Product Overview
The SL2309 is a P-Channel Power MOSFET designed for load switch and PWM applications. It features a VDS of -60V and an ID of -1.6A, with a high-density cell design for ultra-low Rds(on) (<160m @ VGS=-10V). It is fully characterized for avalanche voltage and current, and its excellent package provides good heat dissipation.
Product Attributes
- Brand: SLKORMicro
- Product Code: SL2309
- Package Type: SOT-23
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| General Features | ||||||
| Drain-Source Voltage | VDS | -60 | V | |||
| Drain Current-Continuous | ID | -1.6 | A | |||
| RDS(ON) @ VGS=-10V | RDS(ON) | ID=-1.5A | 140 | 160 | m | |
| RDS(ON) @ VGS=-4.5V | RDS(ON) | ID=-1.5A | 160 | 200 | m | |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | TC=25 | -60 | V | ||
| Gate-Source Voltage | VGS | TC=25 | 20 | V | ||
| Drain Current-Continuous | ID | TC=25 | -1.6 | A | ||
| Pulsed Drain Current | IDM | Note 1 | -8 | A | ||
| Maximum Power Dissipation | PD | TC=25 | 1.5 | W | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250A | -60 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=-60V,VGS=0V | -1 | A | ||
| Gate-Body Leakage Current | IGSS | VGS=20V,VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=-250A | -1.4 | -2.0 | -2.6 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=-10V, ID=-1.5A | 140 | 160 | m | |
| Drain-Source On-State Resistance | RDS(ON) | VGS=-4.5V, ID=-1.5A | 160 | 200 | m | |
| Forward Transconductance | gFS | VDS=-5V,ID=-1.5A | 3 | S | ||
| Dynamic Characteristics | ||||||
| Input Capacitance | Clss | 444.2 | PF | |||
| Output Capacitance | Coss | 19.6 | PF | |||
| Reverse Transfer Capacitance | Crss | VDS=-30V,VGS=0V, F=1.0MHz | 17.9 | PF | ||
| Switching Characteristics | ||||||
| Turn-on Delay Time | td(on) | VDD=-30V, ID=-1.5A, VGS=-10V,RG=3 | 40 | nS | ||
| Turn-on Rise Time | tr | VDD=-30V, ID=-1.5A, VGS=-10V,RG=3 | 35 | nS | ||
| Turn-Off Delay Time | td(off) | VDD=-30V, ID=-1.5A, VGS=-10V,RG=3 | 15 | nS | ||
| Turn-Off Fall Time | tf | VDD=-30V, ID=-1.5A, VGS=-10V,RG=3 | 10 | nS | ||
| Total Gate Charge | Qg | 11.3 | nC | |||
| Gate-Source Charge | Qgs | 2.7 | nC | |||
| Gate-Drain Charge | Qg | VDS=-30,ID=-1.5A, VGS=-10V | 1.6 | nC | ||
| Drain-Source Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V,IS=-1.5A | -1.2 | V | ||
| Diode Forward Current | IS | Note 2 | -1.6 | A | ||
| Reverse Recovery Time | trr | 25 | nS | |||
| Reverse Recovery Charge | Qrr | TJ = 25C, IF =- 1.5A di/dt = -100A/s(Note3) | 31 | nC | ||
2202132030_Slkor-SL2309_C2843304.pdf
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