100V 12A N Channel MOSFET Slkor SL12N10 Designed for High Density Cell Power Management Solutions

Key Attributes
Model Number: SL12N10
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
12A
Operating Temperature -:
-50℃~+150℃
RDS(on):
180mΩ@4.5V,5A
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
20pF@50V
Number:
1 N-channel
Input Capacitance(Ciss):
650pF@50V
Pd - Power Dissipation:
50W
Gate Charge(Qg):
20nC@10V
Mfr. Part #:
SL12N10
Package:
TO-252
Product Description

100V/12A N-Channel MOSFET

This 100V/12A N-Channel MOSFET features a super high-density cell design for extremely low RDS(ON) and exceptional on-resistance and maximum DC current capability. It is designed for power management applications in notebooks, DC/DC converters, load switches, and LCD display inverters.

Product Attributes

  • Device Code: 12N10
  • Package: TO-252

Technical Specifications

ParameterConditionMinTypMaxUnit
Drain-Source Breakdown VoltageVGS=0VID=250A100----V
Zero Gate Voltage Drain CurrentVDS=100VVGS=0V----1.0uA
Gate-Body Leakage CurrentVGS=20VVDS=0V----100nA
Gate Threshold VoltageVDS=VGSID=250A1.023V
Drain-Source On-State ResistanceVGS=10V ID=10A--130160m
VGS=4.5VID=5A--140180m
Input CapacitanceVDS=50VVGS=0V f=1MHz--650--pF
Output CapacitanceVDS=50VVGS=0V f=1MHz--25--pF
Reverse Transfer CapacitanceVDS=50VVGS=0V f=1MHz--20--pF
Total Gate ChargeVDD=50VRL=19 VGS=10VRG=3--20--nC
Gate Source ChargeVDD=50VRL=19 VGS=10VRG=3--2--nC
Gate Drain ChargeVDD=50VRL=19 VGS=10VRG=3--3--nC
Turn-on Delay TimeVDD=50VRL=19 VGS=10VRG=3--6--nS
Turn-on Rise TimeVDD=50VRL=19 VGS=10VRG=3--4--nS
Turn-Off Delay TimeVDD=50VRL=19 VGS=10VRG=3--20--nS
Turn-Off Fall TimeVDD=50VRL=19 VGS=10VRG=3--4--nS
Forward on voltageTj=25Is=3A----1.2V

2409302231_Slkor-SL12N10_C5155433.pdf

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