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quality PNP Silicon Switching Transistor Slkor MMBT589 for Portable Electronics Load Management Applications factory
quality PNP Silicon Switching Transistor Slkor MMBT589 for Portable Electronics Load Management Applications factory

PNP Silicon Switching Transistor Slkor MMBT589 for Portable Electronics Load Management Applications

Key Attributes
Model Number: MMBT589
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Transition Frequency(fT):
100MHz
Type:
PNP
Pd - Power Dissipation:
310mW
Current - Collector(Ic):
1A
Collector - Emitter Voltage VCEO:
30V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
MMBT589
Package:
SOT-23
Product Description

Product Overview

The MMBT589 is a high-current surface mount PNP silicon switching transistor designed for load management in portable applications. It features an epitaxial planar die construction and is available in a lead-free version. This transistor is suitable for various load management tasks in portable electronic devices.

Product Attributes

  • Construction: Epitaxial planar die
  • Package Type: SOT-23
  • Availability: Lead-free version available

Technical Specifications

Symbol Parameter Test Conditions Min. Max. Unit
Maximum Ratings @ Ta=25
VCBO Collector-base voltage -50 V
VCEO Collector-emitter voltage -30 V
VEBO Emitter-base voltage -5 V
IC Collector current (DC) -1.0 A
ICM Collector Current-Peak -2.0 A
PC Collector dissipation 0.31 W
RJA Thermal Resistance, Junction to Ambient 403 C/W
Tj ,Tstg Junction and storage temperature -55 +150 C
Electrical Characteristics @ Ta=25
V(BR)CBO Collector-base breakdown voltage IC=-100A,IE=0 -50 V
V(BR)CEO Collector-emitter breakdown voltage IC=-10mA,IB=0 -30 V
V(BR)EBO Emitter-base breakdown voltage IE=-100A,IC=0 -5 V
ICBO Collector cut-off current IE = 0; VCB = -30V -0.1 A
ICES Collector-emitter cutoff current VCES=-30V -0.1 A
IEBO Emitter cut-off current IC = 0; VEB = -4V -0.1 A
hFE DC current gain VCE = -2V; IC= -1mA 100 300
VCE = -2V;IC = -500mA 100
VCE = -2V;IC = -1.0A 80
VCE = -2V;IC = -2.0A 40
VCE(sat) Collector-emitter saturation voltage IC = -0.5A; IB = -0.05A -0.25 V
IC = -1.0A; IB = -0.1A -0.30 V
IC = -2.0A; IB = -0.2A -0.65 V
VBE(sat) Base-emitter saturation voltage IC = -1.0A; IB = -0.1A -1.2 V
VBE(on) Base-emitter Turn-on voltage IC=-1.0A,VCE=-2.0V -1.1 V
fT Transition frequency IC = -100mA; VCE = -5V; f = 100MHz 100 MHz
Cobo Output capacitance f=1.0MHz 15 pF
Package Information
Device Package Shipping
MMBT589 SOT-23 3000 pcs / Tape & Reel
Package Outline & Soldering Footprint (SOT-23)
Dim Min Max
A 2.70 3.10 mm
B 1.10 1.50 mm
C 0.90 1.10 mm
D 0.30 0.50 mm
E 0.35 0.48 mm
G 1.80 2.00 mm
H 0.02 0.10 mm
J 0.05 0.15 mm
K 2.20 2.60 mm

2401121840_Slkor-MMBT589_C20539666.pdf

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