Slkor FDN302P P Channel MOSFET Featuring High Speed Switching and Low RDS ON for Load Switching Needs

Key Attributes
Model Number: FDN302P
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
2.4A
RDS(on):
55mΩ@4.5V,2.4A
Gate Threshold Voltage (Vgs(th)):
1.5V
Reverse Transfer Capacitance (Crss@Vds):
40pF@15V
Number:
1 P-Channel
Input Capacitance(Ciss):
780pF@15V
Pd - Power Dissipation:
500mW
Gate Charge(Qg):
16nC@10V
Mfr. Part #:
FDN302P
Package:
SOT-23
Product Description

Product Overview

The FDN302P is a P-Channel MOSFET featuring Trench Power LV MOSFET technology with a high-density cell design for low RDS(ON). It offers high-speed switching and is suitable for applications such as battery protection, load switching, and power management.

Product Attributes

  • Brand: slkormicro
  • Model: FDN302P
  • Package: SOT-23

Technical Specifications

ParameterConditionMinTypMaxUnit
Absolute Maximum Ratings
VDS-20V
VGS±12V
TJ150°C
TSTG-50155°C
IDTc=25°C-2.4A
IDMTc=25°C-10A
ISTc=25°C-2.4A
PD0.5W
RθJAMounted on Large Heat Sink250°C/W
Static Electrical Characteristics @ TJ = 25°C (unless otherwise stated)
BV(BR)DSSVGS=0V, ID=-250μA-20V
IDSSVDS=-16V, VGS=0V-1uA
IGSSVGS=±12V, VDS=0V±100nA
VGS(th)VDS=VGS, ID=-250μA-0.6-1.0-1.5V
RDS(on)VGS=-4.5V, ID=-2.4A4455
RDS(on)VGS=-2.5V, ID=-2.0A6480
VSDTj=25±C, Is=-2.4A-0.85-1.2V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise stated)
CISSVDS=-15V, VGS=0V, f=1MHz780pF
COSSVDS=-15V, VGS=0V, f=1MHz75pF
CRSSVDS=-15V, VGS=0V, f=1MHz40pF
QgVDS=-15V, ID=-4.2A, VGS=-10V16nC
QgsVDS=-15V, ID=-4.2A, VGS=-10V2nC
QgdVDS=-15V, ID=-4.2A, VGS=-10V1.9nC
td(on)VDS=-15V, ID=-1A, VGS=-10V, RG=3Ω7nS
trVDS=-15V, ID=-1A, VGS=-10V, RG=3Ω3nS
td(off)VDS=-15V, ID=-1A, VGS=-10V, RG=3Ω27nS
tfVDS=-15V, ID=-1A, VGS=-10V, RG=3Ω12nS

2409302203_Slkor-FDN302P_C19188377.pdf

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