Power Management and Battery Protection Using Slkor FDN337N 30V 2.2A N Channel MOSFET with Low RDS
Key Attributes
Model Number:
FDN337N
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
2.2A
Operating Temperature -:
-55℃~+150℃
RDS(on):
82mΩ@2.5V,2A
Gate Threshold Voltage (Vgs(th)):
1.3V
Reverse Transfer Capacitance (Crss@Vds):
27pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
-
Pd - Power Dissipation:
500mW
Gate Charge(Qg):
2.6nC@4.5V
Mfr. Part #:
FDN337N
Package:
SOT-23
Product Description
Product Overview
The FDN337N is a 30V/2.2A N-Channel MOSFET featuring Trench Power LV MOSFET technology with a high-density cell design for low RDS(ON). It is suitable for applications such as battery protection, load switching, and power management, offering high-speed switching capabilities.
Product Attributes
- Brand: slkormicro
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Symbol | Parameter | Condition | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 30 | V | |||
| VGS | Gate-Source Voltage | 8 | V | |||
| TJ | Maximum Junction Temperature | 150 | C | |||
| TSTG | Storage Temperature Range | -50 | 155 | C | ||
| IS | Diode Continuous Forward Current | Tc=25C | 2.2 | A | ||
| IDM | Pulse Drain Current | Tc=25C | 10 | A | ||
| ID | Tested Continuous Drain Current | Tc=25C | 2.2 | A | ||
| PD | Maximum Power Dissipation | 0.5 | W | |||
| RJA | Thermal Resistance Junction-Ambient | Mounted on Large Heat Sink | 250 | C/W | ||
| Electrical Characteristics | ||||||
| BV(BR)DSS | Drain-Source Breakdown Voltage | VGS=0VID=250A | 30 | V | ||
| IDSS | Zero Gate Voltage Drain Current | VDS=24VVGS=0V | 1 | uA | ||
| IGSS | Gate-Body Leakage Current | VGS=8VVDS=0V | 100 | nA | ||
| VGS(th) | Gate Threshold Voltage | VDS=VGSID=250A | 0.6 | 0.9 | 1.2 | V |
| RDS(on) | Drain-Source On-State Resistance | VGS=4.5VID=2.2A | 40 | 65 | m | |
| RDS(on) | Drain-Source On-State Resistance | VGS=2.5VID=2.0A | 55 | 82 | m | |
| CISS | Input Capacitance | VDS=15VVGS=0V f=1MHz | 285 | pF | ||
| COSS | Output Capacitance | VDS=15VVGS=0V f=1MHz | 33 | pF | ||
| CRSS | Reverse Transfer Capacitance | VDS=15VVGS=0V f=1MHz | 27 | pF | ||
| Qg | Total Gate Charge | VDD=15VID=2A VGS=4.5VRG=3 | 2.6 | nC | ||
| Qgs | Gate Source Charge | VDD=15VID=2A VGS=4.5VRG=3 | 0.6 | nC | ||
| Qgd | Gate Drain Charge | VDD=15VID=2A VGS=4.5VRG=3 | 0.9 | nC | ||
| td(on) | Turn-on Delay Time | VDD=15VID=2A VGS=4.5VRG=3 | 15 | nS | ||
| tr | Turn-on Rise Time | VDD=15VID=2A VGS=4.5VRG=3 | 42 | nS | ||
| td(off) | Turn-Off Delay Time | VDD=15VID=2A VGS=4.5VRG=3 | 16 | nS | ||
| tf | Turn-Off Fall Time | VDD=15VID=2A VGS=4.5VRG=3 | 10 | nS | ||
| VSD | Forward on voltage | Tj=25Is=2.2A | 1.2 | V | ||
2409302203_Slkor-FDN337N_C19188371.pdf
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