100V NPN Silicon Planar Medium Power Transistor Slkor SL493TA Designed for General Purpose Applications

Key Attributes
Model Number: SL493TA
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Transition Frequency(fT):
150MHz
Vce Saturation(VCE(sat)):
600mV@1A,100mA
Number:
1 NPN
Type:
NPN
Pd - Power Dissipation:
1W
Current - Collector(Ic):
1mA
Collector - Emitter Voltage VCEO:
100V
Operating Temperature:
-65℃~+150℃@(Tj)
Mfr. Part #:
SL493TA
Package:
SOT-89
Product Description

Product Overview

The SL493TA is a 100V NPN Silicon Planar Medium Power Transistor designed for general-purpose applications. It features a high continuous current capability of 1A and a low saturation voltage of VCE(sat) < 300mV at 500mA, making it suitable for applications requiring efficient power handling. The device offers a breakdown voltage of BVCEO > 100V.

Product Attributes

  • Brand: SLKormicro
  • Model: SL493TA
  • Type: NPN Silicon Planar Medium Power Transistor

Technical Specifications

Parameter Symbol Rating Unit
Absolute Maximum Ratings (Ta = 25C)
Collector-Base Voltage VCBO 120 V
Collector-Emitter Voltage VCEO 100 V
Emitter-Base Voltage VEBO 5 V
Continuous Collector Current IC 1 mA
Peak Pulse Current ICM 2 A
Base Current IB 200 mA
Power Dissipation at Tamb=25C Ptot 1 W
Operating and Storage Temperature Range Tj:Tstg -65 to 150
Electrical Characteristics (Ta = 25C)
Breakdown Voltages V(BR)CBO IC=100A 120 V
Breakdown Voltages VCEO(sus) IC=10mA* 100 V
Breakdown Voltages V(BR)EBO IE=100A 5 V
Collector Cut-Off Currents ICBO VCB=100V 100 nA
Collector Cut-Off Currents ICES VCES=100V 100 nA
Emitter Cut-Off Current IEBO VEB=4V 100 nA
Base-Emitter Saturation Voltage VBE(sat) IC=500mA, IB=50mA 0.3 V
IC=1A, IB=100mA 0.6 V
Base-Emitter Saturation Voltage VBE(sat) IC=1A, IB=100mA 1.15 V
Base-Emitter Turn On Voltage VBE(on) IC=1A, VCE=10V 1.0 V
Static Forward Current Transfer Ratio hFE IC=1mA, VCE=10V* 100
IC=250mA, VCE=10V* 100 300
IC=500mA, VCE=10V* 60
IC=1A, VCE=10V* 20
Transition Frequency fT IC=50mA, VCE=10V, f=100MHz 150 MHz
Collector-Base Breakdown Voltage Cobo VCB=10V, f=1MHz 10 pF

* Measured under pulsed conditions. Pulse width=300s. Duty cycle 2%


2409302233_Slkor-SL493TA_C3041286.pdf

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