High voltage switching N channel MOSFET Slkor SL5N100P with low gate charge and high dvdt capability
Key Attributes
Model Number:
SL5N100P
Product Custom Attributes
Drain To Source Voltage:
1kV
Current - Continuous Drain(Id):
5A
RDS(on):
3.5Ω@10V,1.75A
Gate Threshold Voltage (Vgs(th)):
4.5V
Reverse Transfer Capacitance (Crss@Vds):
9pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
483pF@25V
Pd - Power Dissipation:
48W
Gate Charge(Qg):
12.67nC@10V
Mfr. Part #:
SL5N100P
Package:
TO-3PH
Product Description
N-channel MOSFET SL5N100
The SL5N100 is an N-channel MOSFET designed for switching applications. It features extremely high dv/dt capability, 100% avalanche tested, minimized gate charge, and very low intrinsic capacitances, ensuring very good manufacturing repeatability. This device is suitable for high-voltage switching applications.
General Features
- Extremely high dv/dt capability
- 100% avalanche tested
- Gate charge minimized
- Very low intrinsic capacitances
- Very good manufacturing repeatability
Applications
- Switching application
Technical Specifications
| Parameter | Symbol | Unit | TO-3PH | TO-220F | TO-220 | TO-263/D2PAK | TO-252/DPAK |
| Drain-source voltage (VGS=0) | VDSS | V | 1000 | 1000 | 1000 | 1000 | 1000 |
| RDS(on) | RDS(on) | < 4.2 | < 4.2 | < 4.2 | < 4.2 | < 4.2 | |
| ID (continuous) at TC=25 | ID | A | 5 | 5 | 5 | 5 | 5 |
| ID (continuous) at TC=100 | ID | A | 3 | ||||
| ID (pulsed) | IDM | A | 18 | 18 | 18 | 18 | |
| Total dissipation at TC=25 | PTOT | W | 48 | 60 | 60 | 80 | |
| Drain-source breakdown voltage | V(BR)DSS | V | 1000 | 1000 | 1000 | 1000 | 1000 |
| Gate threshold voltage | VGS(th) | V | 3 | 3.5 | 4.5 | ||
| Static drain-source on resistance | RDS(on) | 3.5 | 4.2 | ||||
| Input capacitance | Ciss | pF | 483 | ||||
| Output capacitance | Coss | pF | 45 | ||||
| Reverse transfer capacitance | Crss | pF | 9 | ||||
| Total gate charge | Qg | nC | 12.67 | ||||
| Source Drain Current | ISD | A | 5 | ||||
| Forward On Voltage | VSD | V | 1.2 |
2409302301_Slkor-SL5N100P_C6800592.pdf
Related Products
N Channel Enhancement Mode MOSFET YANGJIE YJG130G04CQ Ideal for Power Switching and DC DC Conversion
Product OverviewThe YJG130G04CQ is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. It features split gate trench MOSFET technology, a high-density cell design for low RDS(ON), and an excellent package for heat dissipation. This transistor ...
High Voltage IGBT Module YANGJIE DGW10N120CTL Featuring Fast Recovery Diode for AC DC Servo Drive Amplifiers
Product Overview The DGW10N120CTL S-M352D is a high-performance IGBT module featuring Low VCE(sat) Trench-FS IGBT technology, a maximum junction temperature of 175, and a positive temperature coefficient. It includes a fast and soft recovery anti-parallel FWD and boasts high short circuit capability ...
Planar die Zener diode XZT BZT52C7V5 designed for medium current applications and automated assembly
Product OverviewThe BZT52C2V4 thru BZT52C43 series is a range of Zener diodes featuring planar die construction. These diodes are designed for general purpose, medium current applications and are ideally suited for automated assembly processes. They are available in a lead-free version.Product ...
Epoxy Encapsulation Zener Diode YANGJIE BZX84B6V8Q Small Signal Device With Automotive Qualification
Product OverviewThe BZX84B3V6Q thru BZX84B36Q series are small signal Zener diodes designed for general regulation functions. They feature epoxy encapsulation meeting UL-94 V-0 flammability rating and are halogen-free. These diodes offer a Zener voltage range from 3.6V to 36V with approximately 2% ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
