Trenched N channel MOSFET Slkor SL3420 providing power switching and load switch solutions with RoHS
Key Attributes
Model Number:
SL3420
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
6A
RDS(on):
19mΩ@4.5V;35mΩ@2.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.2V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
35pF
Number:
1 N-channel
Pd - Power Dissipation:
1W
Output Capacitance(Coss):
49pF
Input Capacitance(Ciss):
310pF
Gate Charge(Qg):
4.6nC@4.5V
Mfr. Part #:
SL3420
Package:
SOT-23
Product Description
Product Overview
The SL3420 is a high cell density trenched N-channel MOSFET designed for efficient power switching and load switch applications. It offers excellent RDS(ON) and efficiency, making it suitable for small power applications. This MOSFET meets RoHS and Green Product requirements.
Product Attributes
- Brand: SLKORMicro
- Certifications: RoHS, Green Product
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| VDS | Drain-Source Voltage | 20 | V | |||
| VGS | Gate-Source Voltage | ±12 | V | |||
| ID@TA=25 | Continuous Drain Current, VGS @ 4.5V | 6.0 | A | |||
| ID@TA=70 | Continuous Drain Current, VGS @ 4.5V | 4.0 | A | |||
| IDM | Pulsed Drain Current | 15.0 | A | |||
| PD@TA=25 | Total Power Dissipation | 1 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| RJA | Thermal Resistance Junction-ambient | 125 | /W | |||
| RJC | Thermal Resistance Junction-Case | 80 | /W | |||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 20 | V | ||
| RDS(ON) | Static Drain-Source On-Resistance | VGS=4.5V , ID=3A | 35 | mΩ | ||
| RDS(ON) | Static Drain-Source On-Resistance | VGS=2.5V , ID=2A | 60 | mΩ | ||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 0.4 | 1.2 | V | |
| IDSS | Drain-Source Leakage Current | VDS=16V , VGS=0V , TJ=25 | 1 | uA | ||
| IDSS | Drain-Source Leakage Current | VDS=16V , VGS=0V , TJ=55 | 5 | uA | ||
| IGSS | Gate-Source Leakage Current | VGS=±12V , VDS=0V | ±100 | nA | ||
| gfs | Forward Transconductance | VDS=5V , ID=3A | 10.5 | S | ||
| Qg | Total Gate Charge | VDS=15V , VGS=4.5V , ID=3A | 4.6 | nC | ||
| Qgs | Gate-Source Charge | 0.7 | ||||
| Qgd | Gate-Drain Charge | 1.5 | ||||
| Td(on) | Turn-On Delay Time | VDD=10V , VGS=4.5V , RG=3.3Ω ID=3A | 1.6 | ns | ||
| Tr | Rise Time | 42 | ||||
| Td(off) | Turn-Off Delay Time | 14 | ||||
| Tf | Fall Time | 7 | ||||
| Ciss | Input Capacitance | VDS=15V , VGS=0V , f=1MHz | 310 | pF | ||
| Coss | Output Capacitance | 49 | ||||
| Crss | Reverse Transfer Capacitance | 35 | ||||
| IS | Continuous Source Current | VG=VD=0V , Force Current | 6.0 | A | ||
| VSD | Diode Forward Voltage | VGS=0V , IS=1A , TJ=25 | 1.2 | V |
2508051530_Slkor-SL3420_C50087708.pdf
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