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quality Low VCEsat PNP transistor Slkor 2SB1386-R epitaxial planar type for power and signal applications factory
quality Low VCEsat PNP transistor Slkor 2SB1386-R epitaxial planar type for power and signal applications factory

Low VCEsat PNP transistor Slkor 2SB1386-R epitaxial planar type for power and signal applications

Key Attributes
Model Number: 2SB1386-R
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
500nA
DC Current Gain:
390@0.5A,2V
Transition Frequency(fT):
60MHz
Number:
1 PNP
Type:
PNP
Vce Saturation(VCE(sat)):
1V@4A,0.1A
Pd - Power Dissipation:
500mW
Current - Collector(Ic):
5A
Collector - Emitter Voltage VCEO:
20V
Operating Temperature:
-
Mfr. Part #:
2SB1386-R
Package:
SOT-89
Product Description

Product Overview

The 2SB1386 is a PNP silicon transistor featuring an epitaxial planar type construction. It offers low VCE(sat) with a typical value of -0.35V at IC/IB = -4A/-0.1A, and excellent DC current gain. This transistor is suitable for various applications requiring efficient power handling and signal amplification.

Product Attributes

  • Type: PNP silicon transistor
  • Construction: Epitaxial planar type
  • Package: SOT-89
  • Brand: SLKOR (implied by website URL)
  • Origin: China (implied by website URL)

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
Absolute Maximum Ratings
Collector-base voltage VCBO -30 V
Collector-emitter voltage VCEO -20 V
Emitter-base voltage VEBO -6 V
Collector current IC -5 A
Collector current (Pulse) ICP* Single pulse, Pw=10ms -10 A
Collector power dissipation PC 0.5 W
Junction temperature Tj 150
Storage temperature Tstg -55 +150
Electrical Characteristics
Collector-base breakdown voltage BVCBO IC = -0.5 mA, -30 V
Collector-emitter breakdown voltage BVCEO IC = -1 mA, -20 V
Emitter-base breakdown voltage BVEBO IE = -0.5 mA, -6 V
Collector cut-off current ICBO VCB = -20 V, -0.5 A
Emitter cut-off current IEBO VEB = -5 V, -0.5 A
DC current transfer ratio hFE VCE = -2V, IC = -0.5 A 82 120 270
Collector-emitter saturation voltage VCE(sat) IC=-4A, IB = -0.1A -0.35 V
Output capacitance Cob VCB = -6V, IE=50mA, f=1MHz 120 pF
Transition frequency fT VCB = -20V, IE = 50mA 60 MHz
hFE Classification
Model Marking Range
2SB1386-P BHP* 82-180
2SB1386-Q BHQ* 120-270
2SB1386-R BHR* 180-390
SOT-89 Dimensions
Dimension Symbol Min Typ Max Unit
A 1.4 1.6 mm
B 0.35 0.48 0.44 mm
c 0.23 0.35 mm
D 4.4 4.6 mm
E 2.4 2.6 mm
HE 0.13 mm
Lp 3.75 4.25 mm
e 3.0 mm
w 0.8 mm
e1 1.2 1.5 mm
bp1 0.40 0.53 mm
bp2 0.53 mm
bp3 1.4 1.8 mm

* Single nonrepetitive pulse Pw=10ms

Note: Figures illustrating typical characteristics are provided in the original document but are not included in this structured output.


2410122030_Slkor-2SB1386-R_C18208594.pdf

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