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quality Low current low voltage NPN transistor Slkor BC850C SOT23 package suitable for amplification switching factory
quality Low current low voltage NPN transistor Slkor BC850C SOT23 package suitable for amplification switching factory

Low current low voltage NPN transistor Slkor BC850C SOT23 package suitable for amplification switching

Key Attributes
Model Number: BC850C
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
15nA
Transition Frequency(fT):
100MHz
Vce Saturation(VCE(sat)):
600mV@100mA,5mA
Type:
NPN
Pd - Power Dissipation:
250mW
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
45V
Operating Temperature:
-65℃~+150℃
Mfr. Part #:
BC850C
Package:
SOT-23
Product Description

Product Overview

The BC849-BC850 series are NPN transistors designed for low current and low voltage applications. They feature low power dissipation and are suitable for general-purpose amplification and switching. These transistors are available in the SOT-23 package, offering a compact solution for various electronic designs.

Product Attributes

  • Brand: slkormicro.com
  • Type: NPN Transistors
  • Package: SOT-23

Technical Specifications

Parameter Symbol Rating Unit
Emitter-Base Voltage VEBO 5 V
Collector Current (DC) IC 100 mA
Peak Collector Current ICM 200 mA
Peak Base Current IBM 200 mA
Total Power Dissipation (Tamb = 25 C) Ptot 250 mW
Storage Temperature Tstg -65 to 150 C
Junction Temperature Tj 150 C
Operating Ambient Temperature Tamb -65 to 150 C
Thermal Resistance Junction to Ambient (Transistor mounted on an FR4 printed-circuit board) Rth(j-a) 500 K/W
Collector-Base Voltage VCBO 30 V
Collector-Emitter Voltage VCEO 30 V
Model Marking DC Current Gain (hFE) (IC = 10 mA; VCE = 5 V) DC Current Gain (hFE) (IC = 100 mA; VCE = 5 V) Collector-Emitter Saturation Voltage (VCEsat) (IC = 10 mA; IB = 0.5 mA) Collector-Emitter Saturation Voltage (VCEsat) (IC = 100 mA; IB = 5 mA) Base-Emitter Saturation Voltage (VBEsat) (IC = 10 mA; IB = 0.5 mA) Base-Emitter Saturation Voltage (VBEsat) (IC = 100 mA; IB = 5 mA) Base-Emitter Voltage (VBE) (IC = 2 mA; VCE = 5 V) Collector Capacitance (Cc) (IE = ie = 0; VCB = 10 V; f = 1 MHz) Emitter Capacitance (Ce) (IC = ic = 0; VEB = 500 mV; f = 1 MHz) Transition Frequency (fT) (IC = 10 mA; VCE = 5 V) Noise Figure (F) (IC = 200 A; VCE = 5 V; RS = 2 k, f = 10 Hz to 15.7 kHz) Noise Figure (F) (IC = 200 A; VCE = 5 V; RS = 2 k, f = 1 kHz; B = 200 Hz) Unit
BC849B 2B 240 - 450 200 - 600 90 - 250 200 - 600 700 900 580 - 700 2.5 11 100 4 4 mV
BC849C 2C 450 - 800 420 - 800 90 - 250 200 - 600 700 900 580 - 700 mV
BC850B 2F 240 - 450 200 - 600 90 - 250 200 - 600 700 900 580 - 700 mV
BC850C 2G 450 - 800 420 - 800 90 - 250 200 - 600 700 900 580 - 700 mV
Dimension Symbol Min Max Unit
A A 0.9 1.1 mm
A1 A1 0.01 0.1 mm
b bp 0.38 0.48 mm
c c 0.15 0.2 mm
D D 2.8 3.0 mm
E E 2.5 2.7 mm
e e 1.9 2.1 mm
e1 e1 1.2 1.4 mm
HE HE 0.45 0.55 mm
Lp Lp 0.09 0.15 mm
Q Q 0.3 0.5 mm
w w 0.1 0.3 mm
v v 0.45 0.55 mm

2210091830_Slkor-BC850C_C5185919.pdf

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