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quality High DC Current Gain NPN Transistor Slkor 2SD1781R Plastic Encapsulate Type in Compact SOT23 Package factory
quality High DC Current Gain NPN Transistor Slkor 2SD1781R Plastic Encapsulate Type in Compact SOT23 Package factory

High DC Current Gain NPN Transistor Slkor 2SD1781R Plastic Encapsulate Type in Compact SOT23 Package

Key Attributes
Model Number: 2SD1781R
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
500nA
DC Current Gain:
390@100mA,3V
Transition Frequency(fT):
150MHz
Number:
1 NPN
Vce Saturation(VCE(sat)):
400mV@500mA,50mA
Type:
NPN
Pd - Power Dissipation:
200mW
Current - Collector(Ic):
800mA
Collector - Emitter Voltage VCEO:
32V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
2SD1781R
Package:
SOT-23
Product Description

Product Overview

The 2SD1781 is a Plastic-Encapsulate Transistor (NPN) designed for various electronic applications. It offers a very low VCE(sat) of less than 0.4 V (Typ.) at an IC/IB ratio of 500mA / 50mA. This transistor complements the 2SB1197 and is suitable for use in common emitter configurations. Key features include a high DC current gain (hFE) and a transition frequency (fT) of 150 MHz. It is packaged in a SOT-23 format.

Product Attributes

  • Type: Plastic-Encapsulate Transistor (NPN)
  • Complementary to: 2SB1197
  • Package: SOT-23
  • Brand: slkormicro (implied by website reference)

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
Collector-Base Breakdown Voltage V(BR)CBO IC=50A, IE=0 40 V
Collector-Emitter Breakdown Voltage V(BR)CEO IC=1mA, IB=0 32 V
Emitter-Base Breakdown Voltage V(BR)EBO IE=50A, IC=0 5 V
Collector Cut-off Current ICBO VCB=20V, IE=0 0.5 A
Emitter Cut-off Current IEBO VEB=4V, IC=0 0.5 A
DC Current Gain hFE(1) VCE=3V, IC=100mA 120 390
Collector-Emitter Saturation Voltage VCE(sat) IC=500mA, IB=50mA 0.4 V
Transition Frequency fT VCE=5V, IC=50mA, f=100MHz 150 MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz 10 pF
Classification of hFE(1) Rank Range Marking
Q 120-270 AFQ
R 180-390 AFR
Parameter Symbol Value Unit
Collector-Base Voltage VCBO 40 V
Collector-Emitter Voltage VCEO 32 V
Emitter-Base Voltage VEBO 5 V
Collector Current IC 800 mA
Collector Power Dissipation PC 200 mW
Thermal Resistance Junction To Ambient RJA 625 /W
Operation Junction and Storage Temperature Range TJ,Tstg -55+150
Symbol Dimensions In Inches Dimensions In Millimeters
A 0.900 - 1.150 0.035 - 0.045
A1 0.000 - 0.100 0.000 - 0.004
A2 0.900 - 1.050 0.035 - 0.041
b 0.300 - 0.500 0.012 - 0.020
c 0.080 - 0.150 0.003 - 0.006
D 2.800 - 3.000 0.110 - 0.118
E 1.200 - 1.400 0.047 - 0.055
E1 2.250 - 2.550 0.089 - 0.100
e 1.800 - 2.000 0.071 - 0.079
e1
L
L1 0.300 - 0.500 0.012 - 0.020
0 - 8 0 - 8
REF 0.550 0.022
TYP 0.950 0.037

2204201445_Slkor-2SD1781R_C2999977.pdf

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