Low RDS ON P Channel MOSFET Slkor SL0D05AP Ideal for Power Management and Converter Circuits
Key Attributes
Model Number:
SL0D05AP
Product Custom Attributes
Drain To Source Voltage:
30V
Configuration:
-
Current - Continuous Drain(Id):
5A
Operating Temperature -:
-
RDS(on):
90mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
70pF
Number:
1 P-Channel
Output Capacitance(Coss):
130pF
Input Capacitance(Ciss):
520pF
Pd - Power Dissipation:
1.9W
Gate Charge(Qg):
12nC@10V
Mfr. Part #:
SL0D05AP
Package:
SOT-89-3L
Product Description
Product Overview
The SL0D05AP is a -30V/-5A P-Channel MOSFET featuring Trench Power MV MOSFET technology for excellent heat dissipation and a high-density cell design for low RDS(ON). It is ideal for DC-DC converters and power management functions.
Product Attributes
- Brand: SLKORMicro
- Model: SL0D05AP
Technical Specifications
| Symbol | Parameter | Condition | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | -30 | V | |||
| VGS | Gate-Source Voltage | ±20 | V | |||
| TJ | Maximum Junction Temperature | 150 | °C | |||
| TSTG | Storage Temperature Range | -50 | to | 155 | °C | |
| IS | Diode Continuous Forward Current | Tc=25°C | -5 | A | ||
| IDM | Pulse Drain Current | Tc=25°C | -23 | A | ||
| ID | Tested Continuous Drain Current | Tc=25°C | -5 | A | ||
| PD | Maximum Power Dissipation | Tc=25°C | 1.9 | W | ||
| RθJA | Thermal Resistance Junction-Ambient | Mounted on Large Heat Sink | 65 | °C/W | ||
| Electrical Characteristics | ||||||
| BV(BR)DSS | Drain-Source Breakdown Voltage | VGS=0V, ID=-250μA | -30 | V | ||
| IDSS | Zero Gate Voltage Drain Current | VDS=-30V, VGS=0V | -1 | μA | ||
| IGSS | Gate-Body Leakage Current | VGS=±20V, VDS=0V | ±100 | nA | ||
| VGS(th) | Gate Threshold Voltage | VDS=VGS, ID=-250μA | -1 | -1.5 | -2.5 | V |
| RDS(on) | Drain-Source On-State Resistance | VGS=-10V, ID=-5.0A | 40 | 60 | mΩ | |
| VGS=-4.5V, ID=-4.0A | 56 | 90 | mΩ | |||
| Switching Characteristics | ||||||
| td(on) | Turn-on Delay Time | VDS=-15V, ID=-1A, VGS=-10V, RG=3Ω | 7 | nS | ||
| tr | Turn-on Rise Time | VDS=-15V, ID=-1A, VGS=-10V, RG=3Ω | 13 | nS | ||
| td(off) | Turn-Off Delay Time | VDS=-15V, ID=-1A, VGS=-10V, RG=3Ω | 14 | nS | ||
| tf | Turn-Off Fall Time | VDS=-15V, ID=-1A, VGS=-10V, RG=3Ω | 9 | nS | ||
| Source-Drain Diode Characteristics | ||||||
| VSD | Forward on voltage | Tj=25°C, Is=-5A | -1.2 | V | ||
2411121620_Slkor-SL0D05AP_C42380659.pdf
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