power MOSFET Slkor SL15N60CF optimized for conduction loss and avalanche robustness in power electronics
Key Attributes
Model Number:
SL15N60CF
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
15A
Operating Temperature -:
-55℃~+150℃
RDS(on):
280mΩ@10V,7.5A
Gate Threshold Voltage (Vgs(th)):
4.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
1 N-channel
Output Capacitance(Coss):
23pF
Input Capacitance(Ciss):
780pF
Pd - Power Dissipation:
30W
Gate Charge(Qg):
19.6nC@10V
Mfr. Part #:
SL15N60CF
Package:
TO-220F
Product Description
Product Overview
This Power MOSFET utilizes Slkor's Advanced Super-Junction technology, designed to optimize conduction loss, enhance switching performance, and ensure robustness in avalanche and commutation modes. It is ideal for high-efficiency AC/DC power conversion in switching mode operations.
Product Attributes
- Brand: Slkor
- Technology: Advanced Super-Junction
- Certifications: Pb-free and RoHS Compliant
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Units |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | TC = 25C unless otherwise noted | 650 | V | ||
| Drain Current - Continuous | ID | (TC = 25) | 15 | A | ||
| Drain Current - Continuous | ID | (TC = 100) | 8 | A | ||
| Drain Current - Pulsed | IDM | (Note 1) | 45 | A | ||
| Gate-Source Voltage | VGSS | 30 | V | |||
| Single Pulsed Avalanche Energy | EAS | (Note 2) | 710 | mJ | ||
| Avalanche Current | IAR | (Note 1) | 3.0 | A | ||
| Repetitive Avalanche Energy | EAR | 1.11 | mJ | |||
| Peak Diode Recovery dv/dt | dv/dt | (Note 3) | 20 | V/ns | ||
| MOSFET dv/dt | dv/dt | 100 | ||||
| Power Dissipation | PD | (TC = 25) | 30 | W | ||
| Power Dissipation Derate | above 25 | 0.24 | W/ | |||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | +150 | |||
| Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds | TL | 300 | ||||
| Thermal Characteristics | ||||||
| Thermal Resistance, Junction-to-Case | RJC | 4.1 | /W | |||
| Thermal Resistance, Case-to-Sink | RJS | Typ. | -- | /W | ||
| Thermal Resistance, Junction-to-Ambient | RJA | 62.5 | /W | |||
| Off Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS = 0 V, ID = 250mA | 650 | V | ||
| Drain-Source Breakdown Voltage | BVDSS | VGS = 0 V, ID = 0.25uA,TJ = 150 | 650 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = 600 V, VGS = 0 V | 1 | uA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = 480 V, TC = 125 | 2 | uA | ||
| Gate-Body Leakage Current, Forward | IGSSF | VGS = 30 V, VDS = 0 V | 100 | nA | ||
| Gate-Body Leakage Current, Reverse | IGSSR | VGS = -30 V, VDS = 0 V | -100 | nA | ||
| On Characteristics | ||||||
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250uA | 2.5 | 4.5 | V | |
| Static Drain-Source On-Resistance | RDS(on) | VGS = 10 V, ID = 7.5 A | 238 | 280 | m | |
| Gate resistance | Rg | F=1MHZ | 1.1 | |||
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS = 400 V, VGS = 0V, f = 1MHz | 780 | pF | ||
| Output Capacitance | Coss | 23 | pF | |||
| Time Related Output Capacitance | Co(tr) | VDS = 0V to 400 V, VGS = 0 V | 300 | pF | ||
| Energy Related Output Capacitance | Co(er) | 37 | pF | |||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDS = 400 V, ID = 5.3A VGS = 10 V, RG = 10 See Figure 13 | 7.6 | ns | ||
| Turn-On Rise Time | tr | 6.7 | ns | |||
| Turn-Off Delay Time | td(off) | 38.2 | ns | |||
| Turn-Off Fall Time | tf | 8.4 | ns | |||
| Total Gate Charge | Qg | VDS =400 V, ID = 5.3A, VGS = 10 V | 19.6 | nC | ||
| Gate-Source Charge | Qgs | 3.7 | nC | |||
| Gate-Drain Charge | Qgd | 9.7 | nC | |||
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||
| Maximum Continuous Drain-Source Diode Forward Current | IS | 15 | A | |||
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | 45 | A | |||
| Drain-Source Diode Forward Voltage | VSD | VGS = 0 V, IS = 5.3A | 1.2 | V | ||
| Reverse Recovery Time | trr | VDD = 400 V, IS = 5.3A, dIF / dt = 100 A/s | 234 | ns | ||
| Reverse Recovery Charge | Qrr | 2.2 | uC | |||
2309281727_Slkor-SL15N60CF_C18208656.pdf
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