High Current N Channel MOSFET Slkor SL53N10Q with 55 to 150 Degree Celsius Storage Temperature Range
Key Attributes
Model Number:
SL53N10Q
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
53A
Operating Temperature -:
-
RDS(on):
15.5mΩ@6V,20A
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
55pF
Number:
1 N-channel
Output Capacitance(Coss):
523pF
Pd - Power Dissipation:
50W
Input Capacitance(Ciss):
1.558nF
Gate Charge(Qg):
30.1nC@10V
Mfr. Part #:
SL53N10Q
Package:
PDFN5x6-8
Product Description
Product Overview
The SL53N10Q is a N-Channel Enhancement Mode MOSFET designed for fast switching speeds, reliability, and ruggedness. It is ROHS Compliant & Halogen-Free, 100% UIS Tested and Rg Tested. This MOSFET is suitable for applications such as motor drivers and DC-DC converters.
Product Attributes
- Brand: SLKORMicro (implied by URL)
- Certifications: ROHS Compliant & Halogen-Free, 100% UIS Tested, Rg Tested
Technical Specifications
| Parameter | Symbol | N-Channel Unit | Test Conditions | Min. | Typ. | Max. |
| Absolute Maximum Ratings | VDSS | Drain-Source Voltage | 100 V | |||
| VGSS | Gate-Source Voltage | ±20 V | ||||
| TJ | Maximum Junction Temperature | 150 °C | ||||
| TSTG | Storage Temperature Range | -55 to 150 °C | ||||
| ID | Continuous Drain Current | TC=25°C | 53 A | |||
| ID | Continuous Drain Current | TC=100°C | 33 A | |||
| PD | Maximum Power Dissipation | TC=25°C | 50 W | |||
| Thermal Characteristics | RθJC | Thermal Resistance-Junction to Case | Steady State | 2.5 | °C/W | |
| RθJA | Thermal Resistance-Junction to Ambient | Steady State | 50 | °C/W | ||
| RθJC | Thermal Resistance-Junction to Case | Steady State | 2.5 | °C/W | ||
| RθJA | Thermal Resistance-Junction to Ambient | Steady State | 50 | °C/W | ||
| Electrical Characteristics | BVDSS | Drain-Source Breakdown Voltage | VGS=0V, IDS=250uA | 100 | - | - V |
| VGS(th) | Gate Threshold Voltage | VDS=VGS, IDS=250uA | 2 | 3 | 4 V | |
| RDS(ON) | Drain-Source On-state Resistance | VGS=10V, IDS=20A | - | 8 | 9.6 mΩ | |
| RDS(ON) | Drain-Source On-state Resistance | VGS=6V, IDS=20A | - | 12 | 15.5 mΩ | |
| gfs | Forward Transconductance | VDS=5V, IDS=10A | - | 14 | - S | |
| VSD | Diode Forward Voltage | ISD=10A, VGS=0V | - | 0.8 | 1.1 V | |
| Dynamic Characteristics | Ciss | Input Capacitance | VGS=0V, VDS=50V, Freq.=1MHz | - | 1558 | - pF |
| Coss | Output Capacitance | - | 523 | - pF | ||
| Crss | Reverse Transfer Capacitance | - | 55 | - pF | ||
| Qg | Total Gate Charge | VGS=6V,VDS=50V ID=20A | - | 19.9 | - nC | |
| Qg | Total Gate Charge | VGS=10V,VDS=50V, ID=20A | - | 30.1 | - nC | |
| trr | Reverse Recovery Time | IF=10A, VR=50V dlF/dt=100A/µs | - | 50.8 | - nS |
2309281727_Slkor-SL53N10Q_C18208613.pdf
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