N Channel Power MOSFET Slkor SL3N06 suitable for various electronic switching and amplification uses
Key Attributes
Model Number:
SL3N06
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
3A
Operating Temperature -:
-55℃~+150℃
RDS(on):
90mΩ@10V,3A
Gate Threshold Voltage (Vgs(th)):
3V
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
1 N-channel
Input Capacitance(Ciss):
550pF@25V
Pd - Power Dissipation:
1.38W
Gate Charge(Qg):
-
Mfr. Part #:
SL3N06
Package:
SOT-23
Product Description
Product Overview
The SL3N06 is an N-Channel Power MOSFET designed for various electronic applications. It offers reliable performance with key electrical and thermal characteristics suitable for power switching and amplification tasks.
Product Attributes
- Brand: SL KORMICRO
- Model: SL3N06
- Type: N-Channel Power MOSFET
- Package: SOT-23
Technical Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit | Conditions |
| Drain-Source Breakdown Voltage | BVDSS | 60 | V | ID =250uA,VGS=0V | ||
| Gate Threshold Voltage | VGS(th) | 1 | 3 | V | ID =250uA,VGS= VDS | |
| Diode Forward Voltage Drop | VSD | 1.5 | V | ISD=1A,VGS=0V | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | uA | VGS=0V, VDS= 60V | ||
| Gate Body Leakage | IGSS | +100 | nA | VGS=+20V, VDS=0V | ||
| Static Drain-Source On-State Resistance | RDS(ON) | 90 | m | ID=3A,VGS=10V | ||
| Static Drain-Source On-State Resistance | RDS(ON) | 120 | m | ID=2A,VGS=4.5V | ||
| Input Capacitance | CISS | 550 | pF | VGS=0V, VDS=25V,f=1MHz | ||
| Common Source Output Capacitance | COSS | 125 | pF | VGS=0V, VDS=25V,f=1MHz | ||
| Turn-ON Time | t(on) | 40 | ns | VDS=30V, ID=200mA, RGEN=25 | ||
| Turn-OFF Time | t(off) | 80 | ns | VDS=30V, ID=200mA, RGEN=25 |
| Characteristic | Symbol | Max | Unit | Conditions |
| Drain-Source Voltage | BVDSS | 60 | V | |
| Gate- Source Voltage | VGS | +20 | V | |
| Drain Current-continuous | IDR | 3 | A | |
| Drain Current-pulsed | IDRM | 10 | A | |
| Total Device Dissipation | PD | 1380 | mW | TA=25 |
| Derate above 25 | 3.8 | mW/ | ||
| Thermal Resistance Junction to Ambient | RJA | 90 | /W | |
| Junction and Storage Temperature | TJ,Tstg | 150,-55to+150 |
2004140933_Slkor-SL3N06_C513468.pdf
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