High Speed Switching Slkor BSS8402DW 50V N Channel and P Channel MOSFET for Portable Electronics
Key Attributes
Model Number:
BSS8402DW
Product Custom Attributes
Drain To Source Voltage:
50V
Configuration:
-
Current - Continuous Drain(Id):
130mA
Operating Temperature -:
-
RDS(on):
3Ω@10V,0.13A
Gate Threshold Voltage (Vgs(th)):
500mV
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
3pF@25V
Number:
1 N-Channel + 1 P-Channel
Pd - Power Dissipation:
-
Input Capacitance(Ciss):
42pF@25V
Gate Charge(Qg):
7nC@4.5V
Mfr. Part #:
BSS8402DW
Package:
SOT-363
Product Description
Product Overview
The BSS8402DW is a 50V N-Channel and P-Channel MOSFET designed for high-side switching applications. It features low threshold voltage and fast switching speeds, making it suitable for load/power switching, interfacing, and battery management in ultra-small portable electronics. It also supports logic level shifting.
Product Attributes
- Brand: slkormicro (implied from URL)
- Model: BSS8402DW
Technical Specifications
| Parameter | N-Channel Unit | P-Channel Unit | Condition | Min | Typ | Max |
| Drain-Source Breakdown Voltage (BV(BR)DSS) | 50 V | -50 V | VGS=0V, ID=250A (N-Ch) / ID=-250A (P-Ch) | 50 | -- | -- |
| Zero Gate Voltage Drain Current (IDSS) | 1 uA | -1 uA | VDS=50V, VGS=0V (N-Ch) / VDS=-50V, VGS=0V (P-Ch) | -- | -- | 1 |
| Gate-Body Leakage Current (IGSS) | 100 nA | 100 nA | VGS=20V, VDS=0V | -- | -- | 100 |
| Gate Threshold Voltage (VGS(th)) | 0.5 V | -1 V | VDS=VGS, ID=250A (N-Ch) / ID=-250A (P-Ch) | 0.5 | 0.8 | 1.5 |
| Drain-Source On-State Resistance (RDS(on)) | 1.3 | 1.6 | VGS=10V, ID=0.13A (N-Ch) / VGS=-10V, ID=-0.13A (P-Ch) | -- | 1.3 | 3 |
| 1.4 | 1.8 | VGS=5V, ID=0.1A (N-Ch) / VGS=-5V, ID=-0.1A (P-Ch) | -- | 1.4 | 3.5 | |
| Input Capacitance (CISS) | 42 pF | 30 pF | VDS=25V, VGS=0V, f=1MHz (N-Ch) / VDS=-30V, VGS=0V, f=1MHz (P-Ch) | -- | 42 | -- |
| Output Capacitance (COSS) | 15 pF | 10 pF | VDS=25V, VGS=0V, f=1MHz (N-Ch) / VDS=-30V, VGS=0V, f=1MHz (P-Ch) | -- | 15 | -- |
| Reverse Transfer Capacitance (CRSS) | 3 pF | 5 pF | VDS=25V, VGS=0V, f=1MHz (N-Ch) / VDS=-30V, VGS=0V, f=1MHz (P-Ch) | -- | 3 | -- |
| Total Gate Charge (Qg) | 7 nC | 1.77 nC | VDD=30V, ID=0.2A, VGS=4.5V, RG=10 (N-Ch) / VDD=-30V, ID=-0.15A, VGS=-4.5V, RG=2.5 (P-Ch) | -- | 7 | -- |
| Gate Source Charge (Qgs) | 1.85 nC | 0.57 nC | VDD=30V, ID=0.2A, VGS=4.5V, RG=10 (N-Ch) / VDD=-30V, ID=-0.15A, VGS=-4.5V, RG=2.5 (P-Ch) | -- | 1.85 | -- |
| Gate Drain Charge (Qgd) | 0.65 nC | 0.18 nC | VDD=30V, ID=0.2A, VGS=4.5V, RG=10 (N-Ch) / VDD=-30V, ID=-0.15A, VGS=-4.5V, RG=2.5 (P-Ch) | -- | 0.65 | -- |
| Turn-on Delay Time (td(on)) | 4.6 nS | 2.5 nS | VDD=30V, ID=0.2A, VGS=4.5V, RG=10 (N-Ch) / VDD=-30V, ID=-0.15A, VGS=-4.5V, RG=2.5 (P-Ch) | -- | 4.6 | -- |
| Turn-on Rise Time (tr) | 6.8 nS | 1 nS | VDD=30V, ID=0.2A, VGS=4.5V, RG=10 (N-Ch) / VDD=-30V, ID=-0.15A, VGS=-4.5V, RG=2.5 (P-Ch) | -- | 6.8 | -- |
| Turn-Off Delay Time (td(off)) | 19 nS | 16 nS | VDD=30V, ID=0.2A, VGS=4.5V, RG=10 (N-Ch) / VDD=-30V, ID=-0.15A, VGS=-4.5V, RG=2.5 (P-Ch) | -- | 19 | -- |
| Turn-Off Fall Time (tf) | 11.5 nS | 8 nS | VDD=30V, ID=0.2A, VGS=4.5V, RG=10 (N-Ch) / VDD=-30V, ID=-0.15A, VGS=-4.5V, RG=2.5 (P-Ch) | -- | 11.5 | -- |
| Forward on voltage (VSD) | 1.2 V | -1.2 V | Tj=25, Is=0.1A (N-Ch) / Is=-0.1A (P-Ch) | -- | -- | 1.2 |
| Gate-Source Voltage (VGS) | 20 V | Absolute Maximum Ratings | -- | -- | 20 | |
| Maximum Junction Temperature (TJ) | 150 C | Absolute Maximum Ratings | -- | -- | 150 | |
| Storage Temperature Range (TSTG) | -55 to 150 C | Absolute Maximum Ratings | -55 | -- | 150 | |
| Thermal Resistance Junction-Ambient (RJA) | 328 C/W | Mounted on Large Heat Sink ((*1 in2 Pad of 2-oz Copper), Max.) | -- | 328 | -- | |
| Continuous Drain Current (ID) | 0.13 A | -0.13 A | Tc=25C | -- | 0.13 | -- |
| Pulse Drain Current (IDM) | 0.52 A | -0.52 A | Tc=25C | -- | 0.52 | -- |
2411121621_Slkor-BSS8402DW_C42380674.pdf
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