Trench Technology P Channel MOSFET Slkor FDN336P for Low Resistance and Gate Charge Applications
Key Attributes
Model Number:
FDN336P
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
1.3A
Operating Temperature -:
-25℃~+150℃
RDS(on):
270mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
55pF@10V
Number:
1 P-Channel
Input Capacitance(Ciss):
327pF@10V
Pd - Power Dissipation:
500mW
Gate Charge(Qg):
4.4nC@4.5V
Mfr. Part #:
FDN336P
Package:
SOT-23
Product Description
Product Overview
The FDN336P is a P-Channel MOSFET featuring leading trench technology for low RDS(on) and low Gate Charge. It is designed for applications such as video monitors and power management.
Product Attributes
- Brand: slkormicro
- Model: FDN336P
- Package: SOT-23
Technical Specifications
| Symbol | Parameter | Condition | Min | Typ | Max | Unit |
| VDS | Drain-Source Breakdown Voltage | VGS=0VID=-250A | -20 | -- | -- | V |
| IDSS | Zero Gate Voltage Drain Current | VDS=-16VVGS=0V | -- | -- | -1.0 | uA |
| IGSS | Gate-Body Leakage Current | VGS=8VVDS=0V | -- | -- | 100 | nA |
| VGS(th) | Gate Threshold Voltage | VDS=VGSID=-250A | -0.4 | -0.7 | -1.5 | V |
| RDS(on) | Drain-Source On-State Resistance | VGS=-4.5VID=-1.3A | -- | 105 | 200 | m |
| VGS=-2.5VID=-1.1A | -- | 150 | 270 | m | ||
| CISS | Input Capacitance | VDS=-10VVGS=0V f=1MHz | -- | 327 | -- | pF |
| COSS | Output Capacitance | VDS=-10VID=-2A VGS=-4.5V | -- | 60 | -- | pF |
| CRSS | Reverse Transfer Capacitance | VDD=-10VID=-1A VGS=-4.5VRG=2.8 | -- | 55 | -- | pF |
| Qg | Total Gate Charge | -- | -- | 4.4 | -- | nC |
| Qgs | Gate Source Charge | -- | -- | 0.8 | -- | nC |
| Qgd | Gate Drain Charge | -- | -- | 1.3 | -- | nC |
| td(on) | Turn-on Delay Time | -- | -- | 6 | -- | nS |
| tr | Turn-on Rise Time | -- | -- | 31 | -- | nS |
| td(off) | Turn-Off Delay Time | -- | -- | 45 | -- | nS |
| tf | Turn-Off Fall Time | -- | -- | 40 | -- | nS |
| VSD | Forward on voltage | Tj=25Is=-1.3A | -- | -- | -1.2 | V |
| BV(BR)DSS | Drain-Source Breakdown Voltage | VGS=0VID=-250A | -20 | -- | -- | V |
| ID | Tested Continuous Drain Current | Tc=25C | -- | -1.3 | -- | A |
| IDM | Pulse Drain Current | Tc=25C | -- | -10.0 | -- | A |
| IS | Diode Continuous Forward Current | Tc=25C | -- | -1.3 | -- | A |
| PD | Maximum Power Dissipation | TA=25 | -- | 0.5 | -- | W |
| RJA | Thermal Resistance Junction-to-Ambient | Mounted on Large Heat Sink | -- | 250 | -- | C/W |
| TJ | Maximum Junction Temperature | -- | -- | 150 | -- | C |
| TSTG | Storage Temperature Range | -- | -55 | -- | 150 | C |
| VGS | Gate-Source Voltage | Common Ratings (TC=25C Unless Otherwise Noted) | -- | 8 | -- | V |
2409302203_Slkor-FDN336P_C19188376.pdf
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