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quality Compact SOT523 package NPN transistor Slkor MMBT3904T designed for general purpose and complementary factory
quality Compact SOT523 package NPN transistor Slkor MMBT3904T designed for general purpose and complementary factory

Compact SOT523 package NPN transistor Slkor MMBT3904T designed for general purpose and complementary

Key Attributes
Model Number: MMBT3904T
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
100nA
DC Current Gain:
100@10mA,10V
Transition Frequency(fT):
300MHz
Type:
NPN
Vce Saturation(VCE(sat)):
300mV
Pd - Power Dissipation:
150mW
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-
Mfr. Part #:
MMBT3904T
Package:
SOT-523
Product Description

Product Overview

The MMBT3904T is an NPN transistor designed for general-purpose applications. It features a small package (SOT-523) and is complementary to the MMBT3906T. This transistor offers reliable performance with key electrical characteristics such as breakdown voltages, cutoff currents, DC current gain (hFE), and saturation voltages.

Product Attributes

  • Brand: SLKOR (implied by website URL)
  • Model: MMBT3904T
  • Package Type: SOT-523
  • Transistor Type: NPN
  • Complementary to: MMBT3906T

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
Absolute Maximum Ratings (Ta = 25)
Collector - Base Voltage VCBO 60 V
Collector - Emitter Voltage VCEO 40 V
Emitter - Base Voltage VEBO 6 V
Collector Current - Continuous IC 200 mA
Collector Power Dissipation PC 150 mW
Thermal Resistance, Junction to Ambient RJA 833 C/W
Junction Temperature TJ 150 C
Storage Temperature Range Tstg -55 150 C
Electrical Characteristics (Ta = 25)
Collector- base breakdown voltage VCBO Ic= 100 A IE= 0 60 V
Collector- emitter breakdown voltage VCEO Ic= 1 mA IB= 0 40 V
Emitter - base breakdown voltage VEBO IE= 100A IC= 0 6 V
Collector-base cut-off current ICBO VCB= 60 V , IE= 0 100 nA
Collector cut-off current ICEX VCE= 30 V , VEB(off)=3V 50 nA
Emitter cut-off current IEBO VEB= 5V , IC=0 100 nA
Collector-emitter saturation voltage VCE(sat) IC=10 mA, IB=1mA 0.2 V
IC= 50 mA, IB= 5mA 0.3 V
Base - emitter saturation voltage VBE(sat) IC=10 mA, IB=1mA 0.65 0.85 V
IC= 50 mA, IB= 5mA 0.95 V
DC current gain hFE VCE= 10V, IC= 0.1mA 40
VCE= 10V, IC= 1mA 70
VCE= 10V, IC= 10mA 100 300
VCE= 10V, IC= 50mA
Delay time td VCC=3V, VBE(off)=-0.5V IC=10mA, IB1=1mA 35 nS
Rise time tr VCC=3V, IC=10mA, IB1=1mA 35 nS
Storage time ts VCC=3V, IC=10mA, IB1=IB2=1mA 200 nS
Fall time tf VCC=3V, IC=10mA, IB1=IB2=1mA 50 nS
Collector output capacitance Cob VCB= 5V, IE= 0,f=1MHz 4 pF
Base input capacitance Cib VEB=0.5V, IC=0, f=1MHz 8 pF
Transition frequency fT VCE= 20V, IC= 10mA,f=100MHz 300 MHz
Dimensions (mm are the original dimensions)
Dimension A A1 B c D E
Value 1.8 0.30 1.4 0.15 0.9 0.7
Dimension e e1 Lp Q v w
Value 1.75 0.45 0.2 0.23 0.10 0.13

2209051730_Slkor-MMBT3904T_C5155447.pdf

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