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quality N Channel Enhancement Mode Logic Level MOSFET Slkor BSS131 suitable for power management and switching factory
quality N Channel Enhancement Mode Logic Level MOSFET Slkor BSS131 suitable for power management and switching factory

N Channel Enhancement Mode Logic Level MOSFET Slkor BSS131 suitable for power management and switching

Key Attributes
Model Number: BSS131
Product Custom Attributes
Drain To Source Voltage:
240V
Current - Continuous Drain(Id):
110mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
9.07Ω@4.5V,0.09A
Gate Threshold Voltage (Vgs(th)):
800mV
Reverse Transfer Capacitance (Crss@Vds):
4.2pF@25V
Number:
1 N-channel
Pd - Power Dissipation:
360mW
Input Capacitance(Ciss):
77pF@25V
Gate Charge(Qg):
2.1nC@10V
Mfr. Part #:
BSS131
Package:
SOT-23
Product Description

Product Overview

The BSS131 is an N-Channel, Enhancement Mode, Logic Level MOSFET with dv/dt rating. Designed for general-purpose switching applications, it offers a low on-state resistance and is suitable for various electronic circuits requiring efficient power control.

Product Attributes

  • Brand: slkormicro
  • Model: BSS131
  • Package: SOT-23
  • Certifications: ESD class (JESD22-A114-HBM) 0 (<250V), IEC climatic category; DIN IEC 68-1 55/150/56

Technical Specifications

ParameterSymbolConditionsUnitmin.typ.max.
N-Channel, Enhancement mode, Logic level, dv /dt rated
Continuous drain currentIDTA=25 CA0.11
TA=70 CA0.09
Pulsed drain currentID,pulseTA=25 CA0.4
Reverse diode dv /dtdv /dtID=0.1 A, VDS=192 V, di/dt =200 A/s, Tj,max=150 CkV/s6
Gate source voltageVGSV20
Power dissipationPtotTA=25 CW0.36
Operating and storage temperatureTj, TstgC-55150
Drain-source breakdown voltageV (BR)DSSVGS=0 V, ID=250 AV240--
Gate threshold voltageVGS(th)VDS=0 V, ID=56 AV0.81.41.8
Drain-source leakage currentID (off)VDS=240 V, VGS=0 V, Tj=25 CA--0.01
VDS=240 V, VGS=0 V, Tj=150 CA--5
Gate-source leakage currentIGSSVGS=20 V, VDS=0 VnA--10
Drain-source on-state resistanceRDS(on)VGS=4.5 V, ID=0.09 A-9.0720
VGS=10 V, ID=0.1 A-7.714
Transconductancegfs|VDS|>2|ID|RDS(on)max, ID=0.08 AS0.060.13-
Input capacitanceCissVGS=0 V, VDS=25 V, f =1 MHzpF-5877
Output capacitanceCossVGS=0 V, VDS=25 V, f =1 MHzpF-7.310
Reverse transfer capacitanceCrssVGS=0 V, VDS=25 V, f =1 MHzpF-2.84.2
Turn-on delay timetd(on)VDD=120 V, VGS=10 V, ID=0.1 A, RG=6 ns-3.35.0
Rise timetrVDD=120 V, VGS=10 V, ID=0.1 A, RG=6 ns-3.14.6
Turn-off delay timetd(off)VDD=120 V, VGS=10 V, ID=0.1 A, RG=6 ns-13.720
Fall timetfVDD=120 V, VGS=10 V, ID=0.1 A, RG=6 ns-64.597
Gate to source chargeQgsVDD=192 V, ID=0.1 A, VGS=0 to 10 VnC-0.160.22
Gate to drain chargeQgdVDD=192 V, ID=0.1 A, VGS=0 to 10 VnC-0.81.2
Gate charge totalQgVDD=192 V, ID=0.1 A, VGS=0 to 10 VnC-2.13.1
Gate plateau voltageVplateauVDD=192 V, ID=0.1 A, VGS=0 to 10 VV-2.90-
Diode continuous forward currentISA--0.11
Diode pulse currentIS,pulseA--0.43
Diode forward voltageVSDVGS=0 V, IF=0.1 A, Tj=25 CV-0.811.2
Reverse recovery timetrrVR=120 V, IF=0.1 A, diF/dt =100 A/s TA=25 Cns-42.964.3
Reverse recovery chargeQrrVR=120 V, IF=0.1 A, diF/dt =100 A/s TA=25 CnC-22.634

2209051730_Slkor-BSS131_C5155400.pdf

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