TOSHIBA 2SA1736 TE12L ZC Silicon PNP Epitaxial Transistor Suitable for Power Switching and Amplifier
Key Attributes
Model Number:
2SA1736(TE12L,ZC)
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
100nA
DC Current Gain:
120@100mA,2V
Transition Frequency(fT):
100MHz
Vce Saturation(VCE(sat)):
500mV
Type:
PNP
Pd - Power Dissipation:
1W
Current - Collector(Ic):
3A
Collector - Emitter Voltage VCEO:
50V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
2SA1736(TE12L,ZC)
Package:
SOT-89
Product Description
Product Overview
The TOSHIBA 2SA1736 is a silicon PNP epitaxial transistor designed for power amplifier and power switching applications. It features a low saturation voltage (VCE(sat) = -0.5 V max at IC = -1.5 A) and high-speed switching time (tstg = 0.2 s typ.). This transistor is complementary to the 2SC4541 and comes in a small flat package.
Product Attributes
- Brand: TOSHIBA
- Type: Silicon PNP Epitaxial Transistor (PCT process)
- Package: PW-MINI (JEDEC JEITA SC-62)
- Weight: 0.05 g (typ.)
- Certifications: RoHS COMPATIBLE / [[G]]/RoHS (indicated by a line beside Lot No.)
Technical Specifications
| Characteristics | Symbol | Test Condition | Min | Typ. | Max | Unit |
| Collector cut-off current | ICBO | VCB = -60 V, IE = 0 | -0.1 | A | ||
| Emitter cut-off current | IEBO | VEB = -6 V, IC = 0 | -0.1 | A | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC = -10 mA, IB = 0 | -50 | V | ||
| DC current gain (1) | hFE | VCE = -2 V, IC = -100 mA | 120 | 400 | ||
| DC current gain (2) | hFE | VCE = -2 V, IC = -2 A | 40 | |||
| Collector-emitter saturation voltage | VCE(sat) | IC = -1.5 A, IB = -75 mA | -0.5 | V | ||
| Base-emitter saturation voltage | VBE(sat) | IC = -1.5 A, IB = -75 mA | -1.2 | V | ||
| Transition frequency | fT | VCE = -2 V, IC = -100 mA | 100 | MHz | ||
| Collector output capacitance | Cob | VCB = -10 V, IE = 0, f = 1 MHz | 32 | pF | ||
| Turn-on time | ton | 0.1 | s | |||
| Storage time | tstg | 0.2 | s | |||
| Fall time | tf | 0.1 | s |
Absolute Maximum Ratings
| Characteristics | Symbol | Rating | Unit |
| Collector-base voltage | VCBO | -60 | V |
| Collector-emitter voltage | VCEO | -50 | V |
| Emitter-base voltage | VEBO | -6 | V |
| Collector current | IC | -3 | A |
| Base current | IB | -0.6 | A |
| Collector power dissipation (Note 1) | PC | 500 | mW |
| Collector power dissipation (Note 1) | PC | 1000 | mW |
| Junction temperature | Tj | 150 | C |
| Storage temperature range | Tstg | -55 to 150 | C |
Note 1: Mounted on a ceramic substrate (250 mm2 0.8 t)
2410121807_TOSHIBA-2SA1736-TE12L-ZC_C5331486.pdf
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