TOSHIBA 2SA1587-GR LF High Voltage Silicon PNP Transistor for Audio Frequency Amplifier Performance

Key Attributes
Model Number: 2SA1587-GR,LF
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
DC Current Gain:
200@2mA,6V
Transition Frequency(fT):
100MHz
Number:
1 PNP
Vce Saturation(VCE(sat)):
300mV@10mA,1mA
Type:
PNP
Pd - Power Dissipation:
100mW
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
120V
Operating Temperature:
-55℃~+125℃
Mfr. Part #:
2SA1587-GR,LF
Package:
SOT-323
Product Description

Product Overview

The TOSHIBA 2SA1587 is a silicon PNP epitaxial transistor utilizing the PCT process. It is designed for general-purpose audio frequency amplifier applications. Key advantages include high voltage capability (VCEO = -120 V), excellent hFE linearity, high hFE, low noise, and a small package. It is complementary to the 2SC4117.

Product Attributes

  • Brand: TOSHIBA
  • Type: Silicon PNP Epitaxial Transistor
  • Process: PCT process
  • Package: JEDEC SC-70 (2-2E1A)
  • Weight: 0.006 g (typ.)
  • Start of commercial production: 1987-01

Technical Specifications

CharacteristicsSymbolTest ConditionMinTyp.MaxUnit
Collector cut-off currentICBOVCB = -120 V, IE = 0---0.1A
Emitter cut-off currentIEBOVEB = -5 V, IC = 0---0.1A
DC current gainhFE (Note)VCE = -6 V, IC = -2 mA200-700-
Collector-emitter saturation voltageVCE (sat)IC = -10 mA, IB = -1 mA---0.3V
Transition frequencyfTVCE = -6 V, IC = -1 mA-100-MHz
Collector output capacitanceCobVCB = -10 V, IE = 0, f = 1 MHz-4-pF
Noise figureNFVCE = -6 V, IC = -0.1 mA, f = 1 kHz, Rg = 10 k-1.010dB

Absolute Maximum Ratings

CharacteristicsSymbolRatingUnit
Collector-base voltageVCBO-120V
Collector-emitter voltageVCEO-120V
Emitter-base voltageVEBO-5V
Collector currentIC-100mA
Base currentIB-20mA
Collector power dissipationPC100mW
Junction temperatureTj125C
Storage temperature rangeTstg-55 to 125C

2410121805_TOSHIBA-2SA1587-GR-LF_C2762671.pdf

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