TOSHIBA 2SA1587-GR LF High Voltage Silicon PNP Transistor for Audio Frequency Amplifier Performance
Product Overview
The TOSHIBA 2SA1587 is a silicon PNP epitaxial transistor utilizing the PCT process. It is designed for general-purpose audio frequency amplifier applications. Key advantages include high voltage capability (VCEO = -120 V), excellent hFE linearity, high hFE, low noise, and a small package. It is complementary to the 2SC4117.
Product Attributes
- Brand: TOSHIBA
- Type: Silicon PNP Epitaxial Transistor
- Process: PCT process
- Package: JEDEC SC-70 (2-2E1A)
- Weight: 0.006 g (typ.)
- Start of commercial production: 1987-01
Technical Specifications
| Characteristics | Symbol | Test Condition | Min | Typ. | Max | Unit |
| Collector cut-off current | ICBO | VCB = -120 V, IE = 0 | - | - | -0.1 | A |
| Emitter cut-off current | IEBO | VEB = -5 V, IC = 0 | - | - | -0.1 | A |
| DC current gain | hFE (Note) | VCE = -6 V, IC = -2 mA | 200 | - | 700 | - |
| Collector-emitter saturation voltage | VCE (sat) | IC = -10 mA, IB = -1 mA | - | - | -0.3 | V |
| Transition frequency | fT | VCE = -6 V, IC = -1 mA | - | 100 | - | MHz |
| Collector output capacitance | Cob | VCB = -10 V, IE = 0, f = 1 MHz | - | 4 | - | pF |
| Noise figure | NF | VCE = -6 V, IC = -0.1 mA, f = 1 kHz, Rg = 10 k | - | 1.0 | 10 | dB |
Absolute Maximum Ratings
| Characteristics | Symbol | Rating | Unit |
| Collector-base voltage | VCBO | -120 | V |
| Collector-emitter voltage | VCEO | -120 | V |
| Emitter-base voltage | VEBO | -5 | V |
| Collector current | IC | -100 | mA |
| Base current | IB | -20 | mA |
| Collector power dissipation | PC | 100 | mW |
| Junction temperature | Tj | 125 | C |
| Storage temperature range | Tstg | -55 to 125 | C |
2410121805_TOSHIBA-2SA1587-GR-LF_C2762671.pdf
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.