Voltage Amplifier Silicon NPN Transistor TOSHIBA 2SC2881-Y TE12L ZC High Transition Frequency Device
Key Attributes
Model Number:
2SC2881-Y(TE12L,ZC
Product Custom Attributes
Current - Collector Cutoff:
100nA
DC Current Gain:
120@100mA,5V
Transition Frequency(fT):
120MHz
Type:
NPN
Vce Saturation(VCE(sat)):
1V
Pd - Power Dissipation:
500mW
Current - Collector(Ic):
800mA
Collector - Emitter Voltage VCEO:
120V
Mfr. Part #:
2SC2881-Y(TE12L,ZC
Package:
TO-243AA
Product Description
Product Overview
The TOSHIBA 2SC2881 is a silicon NPN epitaxial transistor designed for voltage amplifier and power amplifier applications. It features high voltage capability (VCEO = 120 V), a high transition frequency (fT = 120 MHz typ.), and a small flat package. This transistor is complementary to the 2SA1201.
Product Attributes
- Brand: TOSHIBA
- Type: Silicon NPN Epitaxial Transistor (PCT process)
- Package: Small flat package (PW-MINI, JEDEC: SC-62, JEITA: 2-5K1A)
- Weight: 0.05 g (typ.)
- Start of commercial production: 1980-07
- Marking: Part No. (or abbreviation code), Lot No., Characteristics indicator
- Environmental Compliance: RoHS compatible (indicated by [[G]]/RoHS or [[G]]/RoHS [[Pb]])
Technical Specifications
| Characteristics | Symbol | Test Condition | Min | Typ. | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Collector-base voltage | VCBO | 120 | V | |||
| Collector-emitter voltage | VCEO | 120 | V | |||
| Emitter-base voltage | VEBO | 5 | V | |||
| Collector current | IC | 800 | mA | |||
| Base current | IB | 160 | mA | |||
| Collector power dissipation (Note 1) | PC | Mounted on ceramic substrate (250 mm2 0.8 t) | 1000 | mW | ||
| Collector power dissipation (Note 1) | PC | Mounted on ceramic substrate (250 mm2 0.8 t) | 500 | mW | ||
| Junction temperature | Tj | 150 | C | |||
| Storage temperature range | Tstg | -55 | 150 | C | ||
| Electrical Characteristics | ||||||
| Collector cut-off current | ICBO | VCB = 120 V, IE = 0 | 0.1 | A | ||
| Emitter cut-off current | IEBO | VEB = 5 V, IC = 0 | 0.1 | A | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC = 10 mA, IB = 0 | 120 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE = 1 mA, IC = 0 | 5 | V | ||
| DC current gain | hFE (Note 3) | VCE = 5 V, IC = 100 mA | 80 | 240 | ||
| Collector-emitter saturation voltage | VCE(sat) | IC = 500 mA, IB = 50 mA | 1.0 | V | ||
| Base-emitter voltage | VBE | VCE = 5 V, IC = 500 mA | 1.0 | V | ||
| Transition frequency | fT | VCE = 5 V, IC = 100 mA | 120 | MHz | ||
| Collector output capacitance | Cob | VCB = 10 V, IE = 0, f = 1 MHz | 30 | pF | ||
2410121746_TOSHIBA-2SC2881-Y-TE12L-ZC_C6077880.pdf
Related Products
Power electronics IGBT YANGJIE MG150HF12TLC1 featuring trench technology and ultra fast soft recovery anti parallel FWD
Product OverviewThe MG150HF12TLC1 S-M409 is a high-performance IGBT module designed for demanding power electronics applications. It features low VCE(sat) with Trench technology, a positive temperature coefficient for VCE(sat), high short circuit capability, and an integrated ultra-fast & soft ...
Zener diode YANGJIE BZX584B15VQ with 15 volt Zener voltage and 2 percent tolerance in compact SOD523 package
Product OverviewThe BZX584B3V6Q thru BZX584B36VQ series are small signal Zener diodes designed for general regulation functions. They feature an epoxy case that meets UL-94 V-0 flammability rating and is halogen-free, with Moisture Sensitivity Level 1. These diodes offer Zener voltages ranging from ...
YANGJIE MG400HF12MIC2 IGBT module featuring fast switching speeds and low stray inductance for power supplies
Product OverviewThe MG400HF12MIC2 is a high-power IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient for enhanced reliability. The module offers fast ...
Epoxy Encapsulation Zener Diode YANGJIE BZX84B6V8Q Small Signal Device With Automotive Qualification
Product OverviewThe BZX84B3V6Q thru BZX84B36Q series are small signal Zener diodes designed for general regulation functions. They feature epoxy encapsulation meeting UL-94 V-0 flammability rating and are halogen-free. These diodes offer a Zener voltage range from 3.6V to 36V with approximately 2% ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
