TOSHIBA RN1106MFV L3F Silicon NPN Bipolar Transistor Designed for Compact Electronic Circuits and Driver

Key Attributes
Model Number: RN1106MFV,L3F
Product Custom Attributes
DC Current Gain:
80@10mA,5V
Operating Temperature:
-55℃~+150℃
Current - Collector(Ic):
100mA
Type:
NPN
Input Resistor:
4.7kΩ
Vce Saturation(VCE(sat)):
300mV@500uA,5mA
Resistor Ratio:
0.1
Number:
1 NPN (Pre-Biased)
Pd - Power Dissipation:
150mW
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
RN1106MFV,L3F
Package:
SOT-723
Product Description

Product Overview

The RN1101MFV to RN1106MFV series are Silicon NPN Epitaxial Type Bipolar Transistors featuring an integrated bias resistor (PCT Process). These transistors are designed for switching, inverter circuits, interfacing, and driver circuits. Their ultra-small package is ideal for high-density mounting, and the integrated resistor reduces the need for external components, leading to smaller system size and faster assembly. Toshiba offers a range of resistance values to suit various circuit designs. These transistors are complementary to the RN2101MFV to RN2106MFV series.

Product Attributes

  • Brand: Toshiba
  • Type: Silicon NPN Epitaxial Type Bipolar Transistor (Bias Resistor built-in)
  • Certifications: AEC-Q101 qualified
  • Complementary to: RN2101MFV to RN2106MFV

Technical Specifications

Part No.R1 (k)R2 (k)VCBO (V)VCEO (V)VEBO (V)IC (mA)PC (mW)Tj (C)Tstg (C)
RN1101MFV4.74.75050105100150-55 to 150
RN1102MFV10105050105100150-55 to 150
RN1103MFV22225050105100150-55 to 150
RN1104MFV47475050105100150-55 to 150
RN1105MFV2.2475050105100150-55 to 150
RN1106MFV4.7475050105100150-55 to 150
Part No.ICBO (nA)ICEO (mA)IEBO (mA)hFEVCE(sat) (V)VI(ON) (V)VI(OFF) (V)Cob (pF)R1 (k)R1/R2
RN1101MFV1005001.52300.821.13.290.03764.71.0
RN1102MFV1005001.52500.381.270.0468101.0
RN1103MFV1005001.52700.171.315.40.0562221.0
RN1104MFV1005001.52800.0821.532.9-471.0
RN1105MFV1005001.52800.0780.61.54-2.20.0468
RN1106MFV1005001.52800.0740.73.29-4.70.08

2410122008_TOSHIBA-RN1106MFV-L3F_C5349733.pdf

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