Power Electronics Device Slkor SL3414A N Channel Enhancement Mode MOSFET for Electronic Applications
Key Attributes
Model Number:
SL3414A
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
4.2A
Operating Temperature -:
-55℃~+150℃
RDS(on):
50mΩ@4.5V,4.2A
Gate Threshold Voltage (Vgs(th)):
600mV
Number:
1 N-channel
Pd - Power Dissipation:
1.2W
Input Capacitance(Ciss):
436pF@10V
Mfr. Part #:
SL3414A
Package:
SOT-23
Product Description
Product Overview
N-Channel Enhancement-Mode MOSFETs designed for various electronic applications. These devices offer efficient switching characteristics and are suitable for a range of power management tasks.
Product Attributes
- Brand: SLKOR Micro
- Model: SL3414A
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit | Conditions |
|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 20 | V | ID = 250uA,VGS=0V | ||
| Gate Threshold Voltage | VGS(th) | 0.4 | 0.6 | 1 | V | ID = 250uA,VGS= VDS |
| Diode Forward Voltage Drop | VSD | 1 | V | IS= 1A,VGS=0V | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | uA | VGS=0V, VDS= 16V | ||
| Zero Gate Voltage Drain Current (High Temp) | IDSS | 5 | uA | VGS=0V, VDS= 16V, TA=55 | ||
| Gate Body Leakage | IGSS | +100 | nA | VGS=+8V, VDS=0V | ||
| Static Drain-Source On-State Resistance | RDS(ON) | 41 | 52 | m | ID=4.2A,VGS=4.5V | |
| Static Drain-Source On-State Resistance | RDS(ON) | 50 | 63 | m | ID=3.7A,VGS=2.5V | |
| Static Drain-Source On-State Resistance | RDS(ON) | 67 | 87 | m | ID=3.2A,VGS=1.8V | |
| Input Capacitance | CISS | 436 | pF | VGS=0V, VDS= 10V,f=1MHz | ||
| Common Source Output Capacitance | COSS | 66 | pF | VGS=0V, VDS= 10V,f=1MHz | ||
| Turn-ON Time | t(on) | 5.5 | ns | VDS= 10V, VGS=5V, RGEN=6 | ||
| Turn-OFF Time | t(off) | 40 | ns | VDS= 10V, VGS=5V, RGEN=6, Pulse Width<300s; Duty Cycle<2.0% |
2409302201_Slkor-SL3414A_C7496558.pdf
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