power switching Slkor IRF7341 Dual N Channel MOSFET with trench technology and green device option
Key Attributes
Model Number:
IRF7341
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
36mΩ@10V,4A
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
45pF@15V
Number:
2 N-Channel
Pd - Power Dissipation:
1.5W
Input Capacitance(Ciss):
1.02nF@15V
Gate Charge(Qg):
19nC@10V
Mfr. Part #:
IRF7341
Package:
SOP-8
Product Description
Product Overview
This Dual N-Channel MOSFET utilizes advanced trench technology and design to deliver excellent RDS(on) with low gate charge. It is suitable for a wide range of applications, offering features such as low gate charge, advanced high cell density trench technology for ultra-low RDS(ON), and an excellent package for good heat dissipation. A green device option is also available.
Product Attributes
- Brand: slkormicro
- Model: IRF7341
- Package: SOP-8
- Certifications: Green device available
Technical Specifications
| Symbol | Parameter | Conditions | Min | Typ | Max | Units |
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 60 | V | |||
| VGS | Gate-Source Voltage | ±20 | V | |||
| ID | Continuous Drain Current | TA=25 | 1 | A | ||
| ID | Continuous Drain Current | TA=70 | 3.5 | A | ||
| IDM | Drain Current-Pulsed | 18 | A | |||
| EAS | Single Pulse Avalanche Energy | 22 | mJ | |||
| IAS | Avalanche Current | 21 | A | |||
| PD | Power Dissipation | 1.5 | W | |||
| TJ, TSTG | Operating and Storage Junction Temperature Range | -55 | +150 | |||
| Thermal Characteristics | ||||||
| RJA | Thermal Resistance, Junction to Ambient | 85 | /W | |||
| RJC | Thermal Resistance Junction-Case | 5 | /W | |||
| Electrical Characteristics | ||||||
| BVDSS | Drain-Sourtce Breakdown Voltage | VGS=0V,ID=250µA | 60 | --- | --- | V |
| IDSS | Zero Gate Voltage Drain Current | VGS=0V, VDS=48V,TJ=25 | --- | --- | 1 | µA |
| IDSS | Zero Gate Voltage Drain Current | VGS=0V, VDS=48V,TJ=55 | --- | --- | 5 | µA |
| IGSS | Gate-Source Leakage Current | VGS=±20V, VDS=0A | --- | --- | ±100 | nA |
| VGS(th) | GATE-Source Threshold Voltage | VGS=VDS, ID=250µA | 1 | --- | 2.5 | V |
| RDS(ON) | Drain-Source On Resistance | VGS=10V,ID=4A | --- | 30 | 36 | mΩ |
| RDS(ON) | Drain-Source On Resistance | VGS=4.5V,ID=3A | --- | 34 | 45 | mΩ |
| GFS | Forward Transconductance | VDS=5V, ID=4A | --- | 28.3 | --- | S |
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VDS=15V, VGS=0V, f=1MHz | --- | 1020 | --- | pF |
| Coss | Output Capacitance | --- | 60 | --- | pF | |
| Crss | Reverse Transfer Capacitance | --- | 45 | --- | pF | |
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDD=30V, ID=4A RG=3.3Ω. VGS=10V | --- | 3 | --- | ns |
| tr | Rise Time | --- | 34 | --- | ns | |
| td(off) | Turn-Off Delay Time | --- | 23 | --- | ns | |
| tf | Fall Time | --- | 6 | --- | ns | |
| Qg | Total Gate Charge | VGS=10V, VDS=48V,ID =4A | --- | 19 | --- | nC |
| Qgs | Gate-Source Charge | --- | 2.6 | --- | nC | |
| Qgd | Gate-Drain “Miller” Charge | --- | 4.1 | --- | nC | |
| RG | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | --- | 2.5 | --- | Ω |
| Drain-Source Diode Characteristics | ||||||
| VSD | Source-Drain Diode Forward Voltage | VGS=0V,IS=1A,TJ=25 | --- | --- | 1.2 | V |
| IS | Continuous Source Current | VG=VD=0V , Force Current | --- | --- | 4.5 | A |
| ISM | Pulsed Source Current | --- | --- | 18 | A | |
| Trr | Reverse Recovery Time | IF=4A , dI/dt=100A/µs , TJ=25 | --- | 12.1 | --- | ns |
| Qrr | Reverse Recovery Charge | --- | 6.7 | --- | nC | |
2302061809_Slkor-IRF7341_C5355495.pdf
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